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The main challenges for PMOS ultra shallow junction formation remain the transient enhanced diffusion (TED) and the solid solubility limit of boron in silicon. It has been demonstrated that low energy boron implantation and spike annealing are key in meeting the 90 nm technology node ITRS requirements. To meet the 65 nm technology requirements many studies have used fluorine co-implantation with boron and Si + or Ge + pre-amorphization (PAI) and spike annealing. Although using BF + 2 can be attractive for its high throughput, self-amorphization and the presence of fluorine, many studies have shown that for the fluorine to successfully reduce TED its energy needs to be well optimized with respect to the boron's, therefore BF + 2 does not present the right fluorine/boron energy ratio for the optimum junction formation. In this work we optimize the fluorine energy when a deep or shallow PAI is used. We also demonstrate that the fluorine dose needs to be carefully optimized otherwise a reverse effect can be observed. We will also show that the optimized junction depends less on the Ge + energies between 2 keV and 20 keV and when HF etch is implemented after Ge + PAI, improvements in both the junction depth and the sheet resistance are observed.

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