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We describe a focused ion beam system and a spectroscopic technique that utilize photons emitted from electronically excited sputtered neutrals for surface element identification and end-point detection. When a target is bombarded by a focused ion beam, some of the sputtered atoms (as much as 0.2%) leave the surface in electronically excited states and then quickly decay (10−6–10−8 s) by emitting photons of characteristic energies. A sputter-induced optical emission spectrometer and elemental imaging system were constructed using a focused ion beam in conjunction with a wavelength-selectable photon detector. Count rates as high as 104/s have been achieved for Al and Si with a 25-keV, 1.5-nA Ga+ beam. For these materials, an unambiguous elemental identification and/or end point can be determined by spectral analysis of the emitted photons. Details of the system and its performance will be discussed. In addition, the increase in yield of electronically excited neutrals from oxides or oxidized surfaces is discussed and the utility of a small gas jet to provide oxygen to the target surface is described. Effects of redeposition are considered as they relate to end-point detection.

A focused ion beam system has been developed to repair 0.25 urn proximity print X-ray masks. The system is distinguished from a 0.5 urn mask repair tool with the addition of a Micrion designed column, differential laser interferometry, thermal management, and gold deposition hardware.These subsystems contribute to the overall tool performance so that the defects can be located, imaged and repaired to industry specifications. . We discuss the functionality of the repair tool and present results from inspection and repair of actual masks.