C.H. Ling scite author profile

Dominant trap energy levels in silicon are extracted from the temperature dependence of minority carrier recombination lifetime, observed through laser microwave photoconductive decay. A small correction is made to the Arrhenius plot by incorporating the weakly temperature-dependent term in the recombination lifetime expression, hitherto ignored. The new extraction technique is simple to implement and the results are in good agreement with published data.

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C.H. Ling

A novel subthreshold slope technique for the extraction of the buried-oxide interface trap density in the fully depleted SOI MOSFET

A unified model for the self-limiting hot-carrier degradation in LDD n-MOSFETs

Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET

High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET

An improved analysis for the determination of trap levels in silicon from laser microwave photoconductive decay measurements

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