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In this abstract we present a highly manufacturable, high performance 90nm technology with best in class ,performance for 35nm gate-length N and P transistors. Unique, but simple and low cost, process changes have been utilized to modulate channel stress and implant profile to generate enhanced performance with no additional masks. High drive currents of 1193uAium and 587uAium are obtained for nMOS and PMOS transistors respectively at I .2V Vdd and an Ioff of 60nMpm. An industry leading 90nm technology CVil of 0 . 6 1~s and 1 .

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