Melt‐processed organic–inorganic perovskite channel layers (see Figure) are demonstrated in field‐effect transistors fabricated on both silicon and polyimide substrates. Linear and saturation regime field‐effect mobilities for the melt‐processed devices are enhanced relative to the values achieved for analogous spin‐coated devices due, at least in part, to the improved grain structure of the melt‐processed films.
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