This work details the method of obtaining time-integrated images of laser-plasma x-ray emission using charge-injection devices ͑CIDs͒, as has been demonstrated on the University of Rochester's 60-beam UV OMEGA laser facility ͓T. R. Boehly et al., Opt. Commun. 133, 495 ͑1997͔͒. The CID has an architecture similar to a charge-coupled device. The differences make them more resistant to radiation damage and, therefore, more appropriate for some application in laser-plasma x-ray imaging. CID-recorded images have been obtained with x-ray pinhole cameras, x-ray microscopes, x-ray spectrometers, and monochromatic x-ray imaging systems. Simultaneous images obtained on these systems with calibrated x-ray film have enabled determination of the absolute detection efficiency of the CIDs in the energy range from 2 to 8 keV.

Nine imagers that exploit distinctive CID properties and incorporate on-chip amplifier configurations (including preamplifier/pixel) were developed for use in automation, nuclear and scientific applications.TV compatible (1 1 mm) formats of 768H X 575'i (European) and 755H X 484V (domestic-RS17O) were fabricated for radiation-hardened product cameras. Operating CIDs provided excellent signal-to-noise at radiation levels of 106 rads/hr, and accumulated dose beyond 1 0 6 rads in silicon (60Co source).Large format imagers featuring random pixel and subarray addressability, were created for spectroscopy and other scientific applications. They possess a 27 X 27 .tm2 pixel in 1024H X 1024V, 1024H X 256V, and 512H X 512V formats. Pixels and subarrays (even overlapping subarrays) can be read out destructively or non-destructively. The above features can be combined with two-dimensional on-CID pixel binning because CID binning preserves the spatial fidelity of the pixel charge.Two 1024 linear-type imagers were fabricated with a preamplifier-per-pixel structure and a 27 X 150 im2 large capacity photo-site. One device features on-chip large signal differencing capability between successive exposures.Two 512H X 5l2V (20 X 20 .Lm2 pixel) format imagers were created for UV photon-counting applications. The imagers provide high local count rates through video-rate random subairay addressability and subarray charge injection. L INTRODUCTIONAdvances in integrated wafer processing technology are creating the opportunity to develop new solid state imaging devices that incorporate key attributes and overcome deficiencies of existing imaging array detectors. Sub-micron technology provides the means to create dense pixel arrays and circuitry, and embed low-noise preamplifiers, complex signal processors and pixel decoding functions peripherally on-chip or within a pixel. Placement of these functions on-chip is a natural evolutionary step for CIDs and will substantially embellish their proven versatility with dramatic improvements in low-noise performance.Charge injection (CD) and charge coupled (CCD) imaging device technology developed concurrently since the early 1970's. Both devices are charge transfer devices (CTDs) whereby signal charge is collected under MOS gates, then transferred and sensed as a voltage during the pixel readout process. Fundamental differences lie in their pixel readout structure and technique. CIDs possess versatile and unique readout capabilities that have established their utility in scientific, radiation and automated measurement applications. CCDs, with their inherently low readout noise structure, have demonstrated a low level video performance that has established their dominance in picture making applications.The two "cultures' appear to be merging into new forms of "preamplifier-per-pixel" (PPP) sensors, sometimes called active pixel sensors (APS), that seek to combine the versatility and robustness of the CID structure with the impressive low-noise performance of CCD structures. A significant step in ...

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Charge Injection Devices were tested for transient and total damage effects using high-energy electrons. The devices had acceptable image quality after 1 Mrad(Si) and operated during fluxes up to 8x109 eIcm2-s.