A study of the luminescence properties of epitaxial GaP containing atomic N grown by molecular beam epitaxy using NH3 and PH3 as the column V sources was conducted. The 77 K photoluminescence spectra of the N-doped epitaxial GaP showed a continuous redshift, from 5691 Å (2.18 eV) to 6600 Å (1.88 eV), resulted when the N concentration exceeded ∼5–7×1019 cm−3. This energy shift was found to be consistent with energy gap predictions using the dielectric theory of electronegativity for the GaP1−xNx system. The data also indicate that the emission intensity was maximum for N∼1×1020 cm−3, and then monotonically decreases with increasing N content. This is consistent with the formation of an indirect band-gap semiconductor.

Impurity-free selective layer disordering, utilizing Si3N4 masking stripes and SiO2 defect (vacancy) sources, is used to realize room-temperature continuous AlxGa1−xAs-GaAs quantum well heterostructure lasers.

Growth of the first few layers of an oxide mixture Ga 2 O 3 ͑Gd 2 O 3 ͒ on GaAs ͑100͒ substrate, electron-beam evaporated from a Ga 5 Go 3 O 12 source, was found to be a single crystal. Reflection high-energy electron diffraction and x-ray diffraction studies show that the thin oxide film is epitaxially grown on GaAs with the surface normal ͑110͒ and in-plane axis ͓001͔ parallel to ͑100͒ and ͓011͔ of GaAs, respectively, and has a structure isomorphic to Mn 2 O 3. Studies using high-resolution transmission electron microscopy on the oxide-GaAs interface indicate some atomic registry between the oxide and GaAs during the initial growth. The chemical composition of the oxide film was determined by x-ray photoelectron spectroscopy to be unequivocally pure Gd 2 O 3 .

Electron mobility, Hall scattering factor, and sheet conductivity in AlGaN/AlN/GaN heterostructures J. Appl. Phys. 110, 113713 (2011) Reduction of the potential energy barrier and resistance at wafer-bonded n-GaAs/n-GaAs interfaces by sulfur passivation J. Appl. Phys. 110, 104903 (2011) Diameter reduction of nanowire tunnel heterojunctions using in situ annealing Appl. Phys. Lett. 99, 203101 (2011) Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam epitaxy J. Appl. Phys. 110, 093718 (2011) Characteristics of a-GaN films and a-AlGaN/GaN heterojunctions prepared on r-sapphire by two-stage growth process

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