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In advanced node semiconductor manufacturing, Chemical Mechanical Polish (CMP) is a critical process step in formation of many modules, from fin formation, replacement metal gate (RMG), Self-Aligned Contact (SAC), to interconnect. In each application, CMP's stop-on capability is increasingly seen as an essential element in gauging device integrity, and thus is critical to the successful implementation of a technology. This presentation discusses the critical importance of CMP selectivity, how selectivity is measured and modulated, and how the need of stopon capability is balanced with the need to make sure complete residue clearing.

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