We propose a new method for high-k film growth and demonstrate its usefulness in terms of improvements of electrical characteristics of MOSCAPs and nMOSFETs. mer-by-mer 12eposition & &tealing (LL-D&A) is a key concept to reduce impurities incorporated in the film through decomposition of precursors. For HfA& (Hf75at.%), it is shown that there are big differences in physical and electrical properties between LL-D&A and conventional ALD+PDA. The maximum film thickness for annealing to effectively remove impurities and presumably to cure imperfections should be less than 1.8nm. The excellent properties for such as a very small flatband voltage shift (SVPB) less than 0.06V for MOSCAP, a well controlled subthreshold swing of 77mV/dec, a peak mobility of 210cm2Ns and 10-year lifetime at V =-I 9V for poly-Si gate nMOSFET, manifest the superiority 08 LLLD&A to the conventional ALWPDA.

A real time ellipsometry study of the growth of amorphous silicon on transparent conducting oxides Effect of the surface condition on the conductance of hydrogenated amorphous silicon

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The spontaneously immortalized S16 Schwann cell line expresses higher levels of myelin-associated glycoprotein (MAG) and PO glycoprotein and their messenger RNAs when grown at high density than at low density [Sasagasako et al: J Neurochem 1996;66:1432–1439]. This up-regulation of myelin protein expression at high density is not associated with decreased cellular proliferation and may be caused by direct cell-to-cell contact. To investigate the hypothesis that increased mRNA levels for myelin proteins are caused by contact between Schwann cells, sparse S16 cell cultures were treated for 48 h with plasma-membrane-enriched fractions isolated from dense S16 cells. The treatment had no effect on the proliferation of the cells, but MAG and PO mRNAs were elevated 2- and 1.3-fold, respectively, in comparison to untreated cells. These effects on levels of myelin protein mRNAs were eliminated by pretreatment of the membrane fraction with heat or trypsin and were not caused by plasma membrane fractions from NIH 3T3 cells. These data support the hypothesis that homotypic contact between Schwann cells up-regulates expression of myelin proteins and suggest the possibility of autotypic contact-mediated regulation of myelinogenesis by adjacent spiraled membranes of individual Schwann cells.

Hydrogenated amorphous silicon films (a-Si:H) have been successfully prepared by a Penning glow discharge of silane, in which both the electric and magnetic fields are applied. A stable discharge has been observed between electrodes in a wide pressure range (0.005–0.5 Torr). It was found that the plasma was nearly confined between electrodes, thus reducing the quartz tube-plasma interaction. Optical and electrical properties have been studied in correlation with SiH4/SiH4+H2 ratio. The photoconductivity of the a-Si:H films show highest value when the ratio is 0.2. The photoconductivity of the a-Si:H films deposited at 0.07 Torr is as high as 5.2×10−4 (Ω cm)−1 under simulated AM 1 (100 mW/cm2) and the corresponding normalized photoconductivity ημτ is 4.6×10−5 cm2/V under 1.9-eV illumination (3×1014 photons/ sec cm2). The films predominantly show the absorption peak due to Si:H stretch mode at 2000 cm−1. The potential features of this technique over conventional ones are described.