Recessed Si 0.8 Ge 0.2 source/drain (S/D) and a compressive contact etch-stop layer have been successfully integrated resulting in nearly 200% improvement in hole mobility. This is the largest reported process-induced hole mobility enhancement to the authors' knowledge. This letter demonstrates that a drivecurrent improvement from recessed Si 0.8 Ge 0.2 plus the compressive nitride layer are in fact additive. Furthermore, it shows that the mobility enhancement is a superlinear function of stress, leading to larger than additive gains in the drive current when combining several stress sources.Index Terms-MOSFET, SiGe, strained-silicon, technology computer-aided design (TCAD).

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A multilayer SiN barrier film with high breakdown field and low leakage current is developed for Cu low-k interconnects and is compared with the SiCNH barrier film used in previous technology nodes. Ultrathin SiN barrier cap films also provide high conformality and fill recessions in Cu lines as observed after CMP. The conformal ultrathin (8-14 nm) multilayer SiN cap is robust with higher breakdown field, lower leakage and forms a good oxidation barrier. The electromigration activation energy for a SiN cap layer of 10-12 nm dielectric thickness is about 0.9 eV.

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