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We have studied electrochemical nucleation and growth of copper on ruthenium and ruthenium-based substrates using galvanostatic methods. We show that potential-time transients recorded during galvanostatic deposition of Cu on Ru can be used to study the effects of additives, deposition parameters, and substrate pre-treatment on Cu island density, and help determine experimental parameters needed to facilitate high island densities and quick sweep of a Cu film front across the resistive substrates.

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We report on a major advancement in full-field EUV Lithography technology. A single patterning approach for contact level by EUVL (NA=0.25) was used for the fabrication of electrically functional 0.186µm 2 6T-SRAMs, with W-filled contacts. Alignment to other 193nm immersion litho levels shows very good overlay values ≤20nm. Other key features of the process are: 1) use of high-k/Metal Gate FinFETs with good gate CD control: 3σ≤7nm after double-dipole 193nm immersion litho (NA=0.85) and 3σ≤9nm after double-Hard Mask gate etch; and 2) use of an ultra-thin NiPt-silicide for S/D and an optimized spacers module without Si recess at dense FINs pitch. Excellent SRAM V DD scalability down to 0.6V (SNM>0.1V DD ) and healthy electrical characteristics (V T , σ(∆V T ), I-V) for the cell transistors are obtained.

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