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Abstract:Using an advanced 300mm CMOS-platform, we report record-low and highly-uniform propagation loss: 0.45±0.12dB/cm for wires, and 2dB/cm for slot waveguides. For WDM devices, we demonstrate channel variation(3-σ) within-wafer and within-device of 6.1nm and 1.2nm respectively.

We report on the fabrication on InGaAs/InP implant free quantum well (IFQW) n-MOSFET devices on 200mm wafers in a Si CMOS processing environment. The starting virtual InP substrates were prepared by means of the aspect-ratio-trapping technique. Post CMP these substrate resulted in a planar substrate with a rms roughness of 0.32 nm. After channel and gate processing source drain regions were formed by the selective epitaxial growth of Si doped InGaAs. Contact to the source/drain regions was made by a standard W-plug/metal 1 process. The contact resistance was estimated to be on the order of 7x10 -7 Ω.cm 2 . Fully processed devices clearly showed gate modulation albeit on top of high levels of source to drain leakage. The source of this leakage was determined to be the result of the unintentional background doping of the InP buffer layer. Simulations show that the inclusion of the p-InAlAs between the InP and InGaAs can effectively suppress this leakage. This development is a significant step towards the integration of InGaAs based devices on a standard CMOS platform.

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