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We demonstrate for the first time a fluorine incorporated bandengineered (BE) tunnel oxide (SiO 2 /HfSiO/SiO 2 ) TANOS with excellent program / erase (P/E) characteristics and endurance to 10 5 cycles. Incorporating fluorine in the tunnel dielectric improves Si/SiO 2 interface resulting in excellent endurance of nearly constant over 3V P/E window for at least 10 5 cycles. Fluorine also reduces interface state generation during retention by ~20%. Furthermore, Fluorine passivates bulk traps leading to as much as ~10x higher charge to breakdown (Q bd ) and ~10-50x lower interface state density (Dit). Fluorine passivation for BE-TANOS is significant because it improves reliability assisting implementation of TANOS flash NVM beyond the 20nm node.

We demonstrate best in class performance for MANOStype charge-trap flash non-volatile memory devices through improved program/erase (P/E), endurance and retention. Band-engineered (BE) tunnel-oxides (TO) and BE-SiN x charge-trap layers are employed to optimize program, erase, and endurance with trade-off in retention. However, for the 1st time we combine BE-TO, BE-SiN x , BE-blocking layer (BE-BL) and an oxygen-bearing high effective-work-function (EWF) electrode to dramatically improve retention while maintaining the combined benefits from the engineering of each individual stack component. Resulting device improvements include larger ΔVth P/E windows of >300%, enduring P/E cycles to at least 100K cycles while maintaining a window >4V, and retention approaching zero% charge loss over 24 hours at 150ºC. The large, enduring windows with improved retention are favorable for multi-level cell application beyond the 30nm node.