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Since the first introduction of amorphous IGZO TFTs, many researchers have investigated the temperature, bias, and luminous instability mechanisms of these devices. In this paper we have developed TCAD process and device models, including hydrogen diffusion and transport to explain degradation phenomena. Our approach has been validated using measurements data.

A flexible and stretchable electronic device is an inevitable component to realize wearable and foldable display device. This requires high stability of backplane device operation on flexible substrate upon external mechanical stress such as bending, stretching, and other types of deformation induced stress. Because mechanical stress effects electrical characteristics and degrades the device performance, many researchers have studied the mechanical stress behavior of thin-film transistor devices on flexible substrates. In this work we present a process simulation model for non-linear deformation stress. We also demonstrate the validation of the model against publish data.

We have developed an ion transport model to simulate various degradation mechanisms in an amorphous InGaZnO (IGZO) thin film transistor (TFT). The simulation model reproduces the published data very well and demonstrates the evolution of charged ions in negative bias illumination stress, from which we can predict the ion contribution to the threshold voltage shift. P-3 / S. Kong