Low voltage operation in s u b -0 . 2 5~ requires the simultaneous integration of all components on a single chiphigh performance, low leakage and mixed-signal componentsis crucial. In this paper we present the successful integration of a low leakage gate-dielectric using a triple-gateoxide process with 16&24&52A, a low-k BEOL and mixed signal components. The 1.5V S U M cell
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