Step and terrace structure has been observed in an area of 1 mm  1 mm on the cleaved surface of KCl-KBr solid-solution single crystal by scanning near-field optical microscope (SNOM) with a small sphere probe of 500 nm diameter. Lateral spatial resolution of the SNOM system was estimated to be 20 nm from the observation of step width and the scanning-step interval. Vertical spatial resolution was estimated to be 5-2 nm from the observation of step height and noise level of photomultiplier tube (PMT). With applying a dielectric dipole radiation model to the probe surface, the reason why such a high spatial resolution was obtained in spite of the 500 nm sphere probe, was understood as the effect of the near-field term appeared in the radiation field equations. r

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Scanning tunneling microscopy observations are performed on a H-terminated Si(001) surface treated with HF solutions and ultrapure water with very low dissolved oxygen and total organic carbon contents. Over a large area, row structures are observed in [110] and [11̄0] directions. Pyramidal-shaped etch pits are also observed, which are caused by anisotropic etching by OH ions. Detailed images clearly show 2×1 periodic structures. It is suggested that every other row of the ideally dihydride 1×1 surface is etched preferentially by OH ions. This explains the mechanism by which the smallest etch pits are formed.

Atomic structures of hydrogen-terminated Si͑001͒ surfaces after HF cleaning are investigated by scanning tunneling microscopy. It is revealed that the surface is macroscopically rough but is composed of terraces and steps. Inside a terrace, 1ϫ1 structures are formed. This corresponds to the ideal 1ϫ1 dihydride structure. The step edges run along the ͗110͘ direction. On the other hand, the 1ϫ1 dihydride structure disappears when the surface is subsequently rinsed with ultrapure water, because every other dihydride row of the ideal 1ϫ1 structure is preferentially etched in ultrapure water.

A highly sensitive hydrogen-gas sensor fabricated using MEMS technology is presented. The sensor chip consists of glass substrates, silicon substrate, and an AT-cut quartz crystal resonator, which is embedded in the microchannel constructed on the substrates. The quartz resonator has a fundamental resonant frequency of 165 MHz and a 200 nm palladium film deposited on its single surface as the hydrogen-gas sensing material. The MEMS hydrogen-gas sensor operates in a wireless manner by exciting and detecting the resonator vibration using the non-contacting antennas. The curvature induced resonant frequency change of the resonator plate caused by the expansion of the palladium film is used for the detection of the hydrogen gas. We succeeded in improving the hydrogen absorption rate and then the sensitivity for the hydrogen-gas detection by applying the air-plasma treatment method, and clarified the role of palladium oxide in lowering the energy barrier for the hydrogen-atom migration from surface to subsurface with the X-ray photoelectron spectroscopy. Thus sensitivity enhanced MEMS hydrogen-gas sensor exhibits a detection limit of 10 ppm or less at room temperature.