To improve the transmittance in IPS mode, submicron pixel electrodes were developed by new patterning process and structure. Unlike typical horizontal electrode structure, the electrodes are vertically formed on the sidewall with our new process. As a simulation result, these submicron electrodes improved transmittance about 10% than conventional type. With this new process, 15-inch panel was successfully fabricated.. / J.-Y. Yang SID 2012 DIGEST • 877

In this paper, a 3-mask IPS mode TFT-LCD panel is introduced by using a new ITO patterning process. The key processes are the CHF process and new ITO etch process which is related to selective crystallization on SiNx layer. In addition, the change of etch CD bias direction from 1-dimension to 2-dimension reduces or eliminates the MURA defects in panel due to the variation of the distance between pixel and common electrodes.

We developed In-Plane-Switching (IPS) mode structure with vertically aligned common electrodes for amorphous silicon (a-Si) thin film transistor liquid crystal display (TFT-LCD). We could improve an aperture ratio of the panel with this new structure by the elimination of storage area and compact design. The new vertical structure showed stabilized voltage ripple, DC charge and flicker variation by RC delay reduction and direct voltage driving from every driver IC. The panel was fabricated with the conventional a-Si TFT process. We focused on making a new structure to get better quality of image compared to previous IPS mode TFT-LCD.

No abstract

It is the important factor that data line reduction with high aperture ratio for low cost pane fabricatol. In the high resolution panel such as WUXGA (1920×RGB×1200 pixels), it is hard to apply data D-IC reduction (DDR) structure because of charging time insufficiency. In this paper, we have proposed a new driving method in WUXGA panel. This dual data and common (DDC) structure reduces D-ICs by the reduction of data line 30% compared to conventional one. Transmittance ratio has been increased about 7% by using the DDC structure. The new structure was fabricated as same the normal 4mask amorphous silicon process with integrated gate driver (GIP). Through reliability test it showed same image quality compared to conventional one and we could verify new pixel panel's stability.