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This article presents a global shutter (GS) high signal-to-noise ratio (SNR) and a high-frame-rate CMOS image sensor (CIS) for in situ fluid concentration distribution measurements using absorption imaging. The pixel consists of a ultraviolet (UV)-visible-near infrared (NIR) waveband pinned photodiode (PD) with high robustness against UV light irradiation for various measurement objects, two-stage lateral overflow integration capacitors (LOFIC) for high dynamic range and high SNR, and a voltage-domain memory bank for GS. The developed prototype CIS with 22.4-μm pitch pixels exhibited 69.7-dB maximum SNR, 123-dB dynamic range, and 1000-frames/s maximum frame rate under single exposure GS and successfully captured images of dynamic movement of NO 2 gas concentration distribution in the vacuum chamber for 300-mm-diameter wafers. Index Terms-Absorption imaging, CMOS image sensor (CIS), global shutter (GS), lateral overflow integration capacitor (LOFIC), signal-to-noise ratio (SNR), wide dynamic range (WDR). I. INTRODUCTIONP RACTICAL realization of smart ways of manufacturing, agriculture, and healthcare is critical to improve the productivity and sustainability of our society. In these Manuscript

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The UV light densitometer was developed to measure concentration of gases having absorption in the ultraviolet region using UV absorption method. The developed densitometer was applied to monitor temporal variation of concentration of ALD precursor TEMAZ introduced into a chamber, where TEMAZ was introduced alternately with purge Ar gas to simulate ALD process. We could successfully capture temporal variation of gas concentration such as time delay in arrival of gas in the chamber due to presence of gas flow. Such phenomenon cannot be measured by the pressure gauge.