0.5 THz Performance of a Type-II DHBT With a Doping-Graded and Constant-Composition GaAsSb Base

Xu, H.; Wu, Bing-Ruey; Iverson, E. W.; Low, T.S.; Feng, Milton

doi:10.1109/led.2013.2290299

Cited by 8 publications

(8 citation statements)

References 7 publications

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“…Under different biasing conditions, f τ = 424 GHz and simultaneous f max = 831 GHz have been exhibited. Although the f max obtained here is ≈10 % below previous results [6] due to process variations (emitter end undercut, contact resistivity) and lower than [7], it exceeds that of other reported HBTs, including those of recent publications [8], [9]. The usable range of transistor operation [10] is extended by increasing the breakdown voltage BV CEO = 4.3 V by means of passivating the base/collector semiconductor with conformal PECVD SiN x prior to BCB planarization.…”

Section: Introductioncontrasting

confidence: 57%

An InGaAs/InP DHBT With Simultaneous $\text{f}_{\boldsymbol \tau }/\text{f}_{\text {max}}~404/901$ GHz and 4.3 V Breakdown Voltage

Rode

Chiang

Choudhary

et al. 2015

IEEE J. Electron Devices Soc.

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We report an InP/InGaAs/InP double heterojunction bipolar transistor fabricated in a triplemesa structure, exhibiting simultaneous 404 GHz f τ and 901 GHz f max . The emitter and base contacts were defined by electron beam lithography with better than 10 nm resolution and smaller than 20 nm alignment error. The base-collector junction has been passivated by depositing a SiN x layer prior to benzocyclobutene planarization, improving the open-base breakdown voltage BV CEO from 3.7 to 4.3 V.INDEX TERMS HBT, InGaAs/InP DHBT, THz device.

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Section: Introductioncontrasting

confidence: 57%

An InGaAs/InP DHBT With Simultaneous $\text{f}_{\boldsymbol \tau }/\text{f}_{\text {max}}~404/901$ GHz and 4.3 V Breakdown Voltage

Rode

Chiang

Choudhary

et al. 2015

IEEE J. Electron Devices Soc.

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“…The conduction band discontinuity at the emitter-base junction is estimated to be 4 meV, which is much smaller than that for GaAsSb-base DHBTs (150 meV) [1]. Thus, there is no need to insert a spacer, such as InGaP [4] or InAlP [5], between the InP emitter and InGaAsSb base. Fig.…”

Section: Device Structure and Fabrication Processmentioning

confidence: 92%

Composition- and Doping-Graded-Base InP/InGaAsSb Double Heterojunction Bipolar Transistors Exhibiting Simultaneous <inline-formula> <tex-math notation="TeX">$f_{t}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="TeX">$f_{\textrm {max}}$ </tex-math></inline-formula> of Over 500 GHz

Kashio

Hoshi

Kurishima

et al. 2014

IEEE Electron Device Lett.

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We demonstrate composition-and doping-gradedbase InP/InGaAsSb double heterojunction bipolar transistors (DHBTs) with a passivation ledge fabricated in a self-aligned process with i-line lithography. We obtained a high current gain of 52 and high breakdown voltage of 5 V for 0.2-µm-emitter DHBTs featuring 30-nm-thick composition-and doping-graded InGaAsSb base and 100-nm-thick InP collector. The HBTs exhibit an f t of 501 GHz and an f max of 503 GHz at a collector current density of 10.6 mA/µm 2 .

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“…To benefit from these performances, accurate characterization of these transistors is crucial in order to confirm the high cutoff frequency and to validate the associated compact model used for integrated circuit (IC) design. Transistor characterization below 110 GHz often involves off-wafer calibration and open-short de-embedding [1]- [3]. It has been shown that measurements beyond 110 GHz are particularly difficult [4].…”

Section: Introductionmentioning

confidence: 99%

InP DHBT test structure optimization towards 110 GHz characterization

Davy

Deng

Nodjiadjim

et al. 2022

ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC)

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In this paper, three different designs of test structures are explored in order to accurately characterize InP DHBTs up to 110 GHz. In particular, a new design, optimized for high frequency measurements while keeping high device density, has been proposed. De-embedding test structures are analyzed and InP DHBT RF figures of merit are extracted for the three designs. Extraction of the maximum oscillation frequency, fMAX, confirms the relevance of optimized test structures as well as good performances of the new design.

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0.5 THz Performance of a Type-II DHBT With a Doping-Graded and Constant-Composition GaAsSb Base

Cited by 8 publications

References 7 publications

An InGaAs/InP DHBT With Simultaneous $\text{f}_{\boldsymbol \tau }/\text{f}_{\text {max}}~404/901$ GHz and 4.3 V Breakdown Voltage

An InGaAs/InP DHBT With Simultaneous $\text{f}_{\boldsymbol \tau }/\text{f}_{\text {max}}~404/901$ GHz and 4.3 V Breakdown Voltage

InP DHBT test structure optimization towards 110 GHz characterization

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