A low cost and high current gain a-Si/c-Si heterojunction photoreceiver for large area optoelectronics integrated circuit applications

An amorphous silicon–germanium alloy (α-SiGe:H) infrared photosensor with a Bragg reflector to obtain high optical gain and responsivity is demonstrated. The Bragg reflector containing α-Si:H and α-SiGe:H layers was grown on the top of p-i-n structure with an amorphous silicon/germanium alloy. All of the amorphous silicon and amorphous silicon–germanium layers were deposited by a low-temperature plasma enhanced chemical vapor phase deposition system. The experimental results of the new structures exhibit a much superior performance to that of conventional p-i-n avalanche photosensor structures. That is, the structure with a Bragg reflector shows a significant improvement in optical gain from 80 to 328 under the incident optical power of 1 μW, and the full width at half maximum can be reduced from 250 to 150 nm.

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Defect study in amorphous silicon/crystalline silicon solar cells by thermally stimulated capacitance

Jagannathan

Anderson

1997

Journal of Applied Physics

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Interface traps created by amorphous silicon (a-Si) deposition using dc magnetron sputtering or a microwave plasma-enhanced chemical vapor deposition method onto p-type crystalline silicon (c-Si) substrates in solar cell structures were studied by thermally stimulated capacitance. The trap properties (type, energy, and concentration) have been estimated as a function of various cell fabrication conditions. Plasma deposition of a-Si is seen to induce electron traps when the c-Si substrates are pretreated with hydrofluoric acid, and hole traps when a thin oxide layer is initially present on the c-Si. A strong correlation is observed between the trap activation energies when electron trapping centers are present and the corresponding photoresponse of these solar cells. Solar cells with 10% efficiency fabricated by a-Si sputtered at 64 W of power, exhibit 3×1014 cm−3 trapping centers with an activation energy of 0.44 eV.

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A low cost and high current gain a-Si/c-Si heterojunction photoreceiver for large area optoelectronics integrated circuit applications

Cited by 6 publications

References 8 publications

Investigation of the M/a-Si:H/c-Si structure as a Schottky contact with a diffusion barrier layer

Investigation of the M/a-Si:H/c-Si structure as a Schottky contact with a diffusion barrier layer

High-gain p-i-n infrared photosensors with Bragg reflectors on amorphous silicon–germanium alloy

Defect study in amorphous silicon/crystalline silicon solar cells by thermally stimulated capacitance

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