Proceedings of International Electron Devices Meeting
DOI: 10.1109/iedm.1995.499188
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A scaling scheme for interconnect in deep-submicron processes

Abstract: AbstTact-In this paper, we study the requirements for interconnect in deep-submicron technologies and identify critical factors that will require innovations in process technology, process integration and circuitand-system design techniques. We also propose a scaling scheme for global lines to optimize the interconnect for a given application domain such as microprocessors, ASIC's or memory. For local interconnect we demonstrate that cross-talk is the major challenge which can be addressed by selectively using… Show more

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Cited by 46 publications
(15 citation statements)
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“…With interconnect swing potential reduced, the ideal improvement of power consumption and delay for each technology node are shown in Table 3, where V dd ðV t Þ is assumed to be 1.8 V (0.50 V), 1.5 V (0.45 V), 1.2 V (0.40 V), 1.0 V (0.35 V) and 0.7 V (0.25 V) for 0.18, 0.13, 0.10, 0.07 and 0.05 lm technology nodes, respectively [13]. The V dd ðV t Þ values of 0.05 lm technology node come from the reliable deduction based on ITRS 1999.…”
Section: Low Swing Interconnect Designmentioning
confidence: 99%
“…With interconnect swing potential reduced, the ideal improvement of power consumption and delay for each technology node are shown in Table 3, where V dd ðV t Þ is assumed to be 1.8 V (0.50 V), 1.5 V (0.45 V), 1.2 V (0.40 V), 1.0 V (0.35 V) and 0.7 V (0.25 V) for 0.18, 0.13, 0.10, 0.07 and 0.05 lm technology nodes, respectively [13]. The V dd ðV t Þ values of 0.05 lm technology node come from the reliable deduction based on ITRS 1999.…”
Section: Low Swing Interconnect Designmentioning
confidence: 99%
“…For circuit simulation, a 0.25 m SPICE device model was created based on SIA roadmap specifications [19], [20] and typical values reported in the literature. The sensitivity of , the measured drain current when both the gate and drain are held at the supply rail, is shown in Fig.…”
Section: Simulation Examplementioning
confidence: 99%
“…Hence, the combined effects of chip size growth and scaling results in the rapid increase of capacitance and resistance of interconnect wires. This increases the propagation delay through interconnects by a factor of S 2 S 2 C , where S is the scaling factor and S C is the chip size increase factor which accounts for the increase in chip size from one generation of ICs to the next [Rahmat et al 1995].…”
Section: Introductionmentioning
confidence: 99%