2012
DOI: 10.1063/1.3692580
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Anomalous positive flatband voltage shifts in metal gate stacks containing rare-earth oxide capping layers

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Cited by 3 publications
(1 citation statement)
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“…Optimum properties can be obtained by using nanolaminated, dopped and mixed oxides such as lanthanum gadolinium oxide [37], HfGdO/HfTiO [38], Al-doped TiO2 [39], Gd doped HfO2 [40], HfO2/Ta2O5 [41], HfTiO/Y2O3 [42], SrTa2O6 [43], Gd2O3/HfSiO [44] etc.…”
Section: High Permittivity Dielectricsmentioning
confidence: 99%
“…Optimum properties can be obtained by using nanolaminated, dopped and mixed oxides such as lanthanum gadolinium oxide [37], HfGdO/HfTiO [38], Al-doped TiO2 [39], Gd doped HfO2 [40], HfO2/Ta2O5 [41], HfTiO/Y2O3 [42], SrTa2O6 [43], Gd2O3/HfSiO [44] etc.…”
Section: High Permittivity Dielectricsmentioning
confidence: 99%