Barrier inhomogeneities of tungsten Schottky diodes on 4H-SiC

Abstract

Electrical properties of tungsten on silicon carbide (4H-SiC) Schottky diodes are investigated through the analysis of the forward current-voltage (I-V) characteristics measured at elevated temperatures within the range of 303-448 K. The subsequently derived Schottky barrier heights (SBHs) and ideality factors are found to be temperature dependent with distributions that are adequately explained within the framework of the model proposed by Tung in which he considers the barrier at a metal-semiconductor interface as consisting of locally non-uniform but interacting patches of different barrier heights embedded in a background of uniform barrier height. A uniform barrier height of 1.248 eV, a Richardson's constant of 129.95 A cm −2 K 2 and a factor T o of 23.92 K obtained agree very well with values published previously for similar Schottky barrier systems. Therefore, it has been concluded that the temperature-dependent I-V characteristics of the device can be successfully explained with lateral inhomogeneities distribution of the SBH.

Effects of deposition temperature on the electrical properties of Ti/SiC Schottky barrier diodes

“…The small value of the extracted Richardson's constant is interpreted as an indication that the actual area of the contact is much smaller than the device area. 4,7,20 The structural composition of the interface between the Ti and SiC was investigated by x-ray diffraction (XRD) measurements, performed on each of the six Ti Schottky metal contacts deposited at 28 o C to 900 o C. The XRD scans were performed on four Schottky contacts on each sample and it was verified that the scans from each sample were consistent. Figure 7 shows the 2θ scans obtained from these samples.…”

Analysis of the electrical characteristics of Zn/ZnSe/n-Si/Au–Sb structure fabricated using SILAR method as a function of temperature

“…6. The deviation in the experimental ln(I 0 /T 2 ) versus 1/kT curve at low temperatures can be explained by the temperature depended of the BH and ideality factor due to the presence of the spatially inhomogeneous BH and potential [1,[21][22][23][24][25][26][27][28][29][30][31][32][33][34]. The current through the diode flows preferentially through the lower barriers in the potential distribution.…”

Comparison of nickel, cobalt, palladium, and tungsten Schottky contacts on n-4 H -silicon carbide

“…We also investigated whether there was a correlation between reported metallurgical reactions at the metal-semiconductor interface and our observed electronic aspects. Understanding contact properties is important for eventual better device control [26].…”