Deep levels and minority carrier lifetime in proton irradiated silicon pin diode

Abstract

A model for minority carrier lifetime variation in the oxide-silicon structure following 253.7 nm ultraviolet irradiation Deep levels induced by MeV-proton irradiation in n Ϫ () region of Si p--n diodes were investigated by photocapacitance method under constant capacitance condition. Electrical property, dosage dependence, spatial distribution, and annealing behavior of the deep levels were studied. Carrier lifetime reduction in pin diodes by the deep level was examined by current-voltage characteristics and impedance measurements. From proton dosage dependence and annealing effect, the decreasing behavior of minority carrier lifetime with increasing deep level density was revealed.

Photocapacitive Determination of Spatial Distribution of Deep Levels at Si / SiO2 Interfaces

“…Recent PHCAP results have shown detailed spatial distribution of MeV proton-induced deep levels in Si applying the constant capacitance method. 20 In the present work, we applied the PHCAP method to the investigation on spatial distribution of deep levels existing at the Si/silicon oxide interface.…”