Experimental Demonstration of a 1.2kV Trench Clustered Insulated Gate Bipolar Transistor in Non Punch Through Technology

Vershinin, K.; Sweet, M.; Thomson, J.; Waind, P.; Bruce, J.; Narayanan, E.M. Sankara

doi:10.1109/ispsd.2006.1666102

Cited by 17 publications

(6 citation statements)

References 3 publications

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“…As the p-base/n-well junction is reverse biased, with increase in the anode voltage, the depletion boundary within the n-well region moves towards the p-well junction. Finally, the n-well region will punch through at a pre-defined voltage, termed as "self-clamping" voltage [13]. Any further increase of the anode voltage is supported by the p-well/n-drift junction.…”

Section: Recommended For Publication By Associate Editormentioning

confidence: 99%

Numerical Analysis of 3-D Scaling Rules on a 1.2-kV Trench Clustered IGBT

Luo

Long

Sweet

et al. 2018

IEEE Trans. Electron Devices

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Abstract-3-dimensional scaling rules for the cathode cells and threshold voltages of a 1.2-kV Trench Clustered IGBT (TCIGBT) are investigated using calibrated models in Synopsys Sentaurus TCAD tools. Scaling down results in an enhancement of current gain of the inherent thyristor action which reduces the forward voltage drop even more than that of a scaled Trench IGBT (TIGBT). For identical switching losses, at a scaling factor k=3, the forward voltage drop is reduced by 20% at 300K and 30% at 400K when compared to the conventional TCIGBT (k=1). Most importantly, despite its lower conduction losses than an equivalent TIGBT, a scaled TCIGBT structure can maintain its short circuit capability, due to the additional scaling principle applied to the n-well and p-well regions, maintaining the self-clamping feature. Thus, TCIGBT is a more efficient chip-for-chip, reliable replacement of a TIGBT for energy savings in applications.Index Terms-IGBT, Clustered IGBT, Vce(sat) -Eoff trade-off, power semiconductor device, scaling rule, short circuit capability, self-clamping feature.

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Section: Recommended For Publication By Associate Editormentioning

confidence: 99%

Numerical Analysis of 3-D Scaling Rules on a 1.2-kV Trench Clustered IGBT

Luo

Long

Sweet

et al. 2018

IEEE Trans. Electron Devices

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“…The CIGBT/TCIGBT operating mechanism has been discussed in several publications [2][3][4][5][6][7][8][9]. The deep p-well/n-drift junction is mainly used to support voltage in the off-state.…”

Section: Device Technologiesmentioning

confidence: 99%

“…However, as the pbase/n-well junction is reverse-biased its depletion region extends toward the p-well, resulting in punch-through of p-base/n-well/p-well transistor at a certain voltage known as the 'self-clamping' voltage. This feature ensures that any further increase in the anode potential is dropped only across the p-well and n-drift regions and the cathode trenches are protected from high anode voltage [2][3][4][5][6][7][8][9]. In contrast the T-IGBT trenches are exposed to high anode voltages.…”

Section: Device Technologiesmentioning

confidence: 99%

“…is a MOS-gate controlled three terminal thyristor structure device showing current saturation characteristics at high gate voltages and a short circuit performance. The excellent performance of the CIGBT family of devices is due to a unique 'self-clamping' feature that limits the potential of the cathode cells and also enables fast turn-off [2][3][4][5][6][7][8][9]. Experimental planar CIGBTs have shown superior performance to IGBT at 1.2kV to 3.3kV, while T-CIGBT has also been experimentally demonstrated at 1.2kV [3,4].…”

Section: Introductionmentioning

confidence: 99%

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Comparison of trench gate IGBT and CIGBT devices for 3.3kV high power module applications

et al. 2010

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Trench gate MOS controlled devices are more desirable in power modules because their reduced Vce(sat) enables increased output power density. However with increased drift region thickness with voltage rating, there is significant increase in conduction loss in Trench gate IGBT (T-IGBT) due to low plasma density from inherent pnp transistor action. On the other hand a well-designed trench gate MOS-controlled thyristor such as the Trench Cluster Insulated Gate Bipolar Transistor (T-CIGBT) is a drop in solution, which can provide thyristor-like onstate loss without compromising ease of control, turnoff loss and SOA. The T-CIGBT device technology employs controlled thyristor to lower on-state and a unique 'self-clamping' of the cathode cell potential to control the saturation current density. The comparison of T-IGBT and T-CIGBT 3.3kV/800A module simulation results in this paper show that T-CIGBT can reduce hard switching total losses and increase the power density of existing IGBT module footprints. Index Terms--Cluster insulated gate bipolar transistor (CIGBT), Controlled thyristor, trenchclustered insulated gate bipolar transistor (T-CIGBT) and T-IGBT.I.

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“…This action makes possible current saturation at gate voltages and anode voltages by protecting the cathode cells from high anode voltage. In addition, the "self-clamp" action enhances turn-off speed [6]- [10].…”

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confidence: 99%

Turn-Off Behavior of 1.2 kV/25 A NPT-CIGBT Under Clamped Inductive Load Switching

Kong

Sweet

Sharma

et al. 2009

IEEE Trans. Power Electron.

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For the first time, this paper analyzes the turn-off behavior of the planar 1.2 kV/25, a nonpunch-through clustered insulated gate bipolar transistor (NPT-CIGBT) under clamped inductive load switching, in detail and through experiment simulation. Turn-off behavior of the CIGBT involves strong interaction between device and circuit parameters. The circuit parameter such as gate resistance was varied in order to observe the dI/dt, dV/dt, and turn-off energy loss of the device. Experimental results are shown at 25 C and 125 C. In addition, numerical simulation results are used to enhance understanding of the internal physics of the NPT-CIGBT turn-off process.

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Experimental Demonstration of a 1.2kV Trench Clustered Insulated Gate Bipolar Transistor in Non Punch Through Technology

Cited by 17 publications

References 3 publications

Numerical Analysis of 3-D Scaling Rules on a 1.2-kV Trench Clustered IGBT

Numerical Analysis of 3-D Scaling Rules on a 1.2-kV Trench Clustered IGBT

Comparison of trench gate IGBT and CIGBT devices for 3.3kV high power module applications

Turn-Off Behavior of 1.2 kV/25 A NPT-CIGBT Under Clamped Inductive Load Switching

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