High‐Performance Graphene Devices on SiO<sub>2</sub>/Si Substrate Modified by Highly Ordered Self‐Assembled Monolayers

Wang, Xiaomu; Xu, Jianbin; Chen, YangQuan; Du, Jun; Xie, Weiguang

doi:10.1002/adma.201100476

Cited by 106 publications

(117 citation statements)

References 29 publications

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“…Briefly, we pre-deposited 100 nm Au film on a glass slide. Then we used a tungsten probe tip attached to a micro manipulator to carefully pick up the Au film and transfer to the target location under microscope 47 . AFM was performed before and after growth to extract the thickness of the crystals.…”

Section: Methodsmentioning

confidence: 99%

Two-dimensional quasi-freestanding molecular crystals for high-performance organic field-effect transistors

et al. 2014

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Two-dimensional atomic crystals are extensively studied in recent years due to their exciting physics and device applications. However, a molecular counterpart, with scalable processability and competitive device performance, is still challenging. Here, we demonstrate that high-quality few-layer dioctylbenzothienobenzothiophene molecular crystals can be grown on graphene or boron nitride substrate via van der Waals epitaxy, with precisely controlled thickness down to monolayer, large-area single crystal, low process temperature and patterning capability. The crystalline layers are atomically smooth and effectively decoupled from the substrate due to weak van der Waals interactions, affording a pristine interface for high-performance organic transistors. As a result, monolayer dioctylbenzothienobenzothiophene molecular crystal field-effect transistors on boron nitride show record-high carrier mobility up to 10 cm 2 V À 1 s À 1 and aggressively scaled saturation voltage B1 V. Our work unveils an exciting new class of two-dimensional molecular materials for electronic and optoelectronic applications.

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Section: Methodsmentioning

confidence: 99%

Two-dimensional quasi-freestanding molecular crystals for high-performance organic field-effect transistors

et al. 2014

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“…First, the sealed cavity prevents traditional patterning methods, such as lithography, because solution treatment always causes the suspended graphene to collapse (see Supplementary Information for details). In our experiments, a 'lithography-free' method was used to fabricate the electrodes, as previously reported by Wang et al 29 Second, graphene samples should be carefully selected to maximize the strain and to obtain controllable deformation. For these purposes, membranes that exactly match the cavity width are required, such as those shown in Figures 1c and d. Samples with a large supported part or partially covered cavity should be avoided.…”

Section: Fabrication Of 2d Graphene Nemsmentioning

confidence: 99%

Observation of a giant two-dimensional band-piezoelectric effect on biaxial-strained graphene

et al. 2015

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Piezoelectric materials used in the development of nanoscale mechanical sensors, actuators and energy harvesters have received much attention. More recently, devices made of graphene are of particular interest because of graphene's intriguing electronic and mechanical properties. Intrinsic graphene has long been considered devoid of the piezoelectric effect, although flexoelectricity has been exploited to demonstrate piezoelectricity in functionalized graphene and graphene nanoribbons. The perceived lack of this property has restricted graphene's use in nanoelectromechanical systems (NEMS) for electromechanical coupling purposes. Here an unprecedented two-dimensional (2D) piezoelectric effect on a strained/unstrained graphene junction is reported. In stark contrast to the bulk piezoelectric effect that results from the occurrence of electric dipole moments in solids, the 2D piezoelectric effect arises from the charge transfer along a work function gradient introduced by the biaxial-strainengineered band structure. The observed effect, termed the band-piezoelectric effect, exhibits an enormous magnitude due to the ultrathin structure of graphene. On the basis of the band-piezoelectric effect, a graphene nanogenerator and a pressure gauge were fabricated. The results not only provide a versatile NEMS platform for sensing, actuating and energy harvesting, but also pave the way for efficiently modulating graphene via strain engineering.

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“…To overcome the disadvantages caused by the gapless band in graphene, intensive efforts have been strived, such as chemical doping, topography control, etc 19, 20, 21. Unfortunately, only very limited success has been achieved 20, 22, 23, 24. Consequently, uncovering other layered materials with bandgap is urgent.…”

Section: Introductionmentioning

confidence: 99%

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

et al. 2016

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As an important component of 2D layered materials (2DLMs), the 2D group IV metal chalcogenides (GIVMCs) have drawn much attention recently due to their earth‐abundant, low‐cost, and environmentally friendly characteristics, thus catering well to the sustainable electronics and optoelectronics applications. In this instructive review, the booming research advancements of 2D GIVMCs in the last few years have been presented. First, the unique crystal and electronic structures are introduced, suggesting novel physical properties. Then the various methods adopted for synthesis of 2D GIVMCs are summarized such as mechanical exfoliation, solvothermal method, and vapor deposition. Furthermore, the review focuses on the applications in field effect transistors and photodetectors based on 2D GIVMCs, and extends to flexible devices. Additionally, the 2D GIVMCs based ternary alloys and heterostructures have also been presented, as well as the applications in electronics and optoelectronics. Finally, the conclusion and outlook have also been presented in the end of the review.

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High‐Performance Graphene Devices on SiO₂/Si Substrate Modified by Highly Ordered Self‐Assembled Monolayers

Cited by 106 publications

References 29 publications

Two-dimensional quasi-freestanding molecular crystals for high-performance organic field-effect transistors

Two-dimensional quasi-freestanding molecular crystals for high-performance organic field-effect transistors

Observation of a giant two-dimensional band-piezoelectric effect on biaxial-strained graphene

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

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High‐Performance Graphene Devices on SiO2/Si Substrate Modified by Highly Ordered Self‐Assembled Monolayers

Cited by 106 publications

References 29 publications

Two-dimensional quasi-freestanding molecular crystals for high-performance organic field-effect transistors

Two-dimensional quasi-freestanding molecular crystals for high-performance organic field-effect transistors

Observation of a giant two-dimensional band-piezoelectric effect on biaxial-strained graphene

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

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High‐Performance Graphene Devices on SiO₂/Si Substrate Modified by Highly Ordered Self‐Assembled Monolayers