Lateral spreading of focused ion-beam-induced damage

Bever, T.; Jäger-Waldau, G.; Eckberg, M.; Heyen, E. T.; Lage, H.; Wieck, A. D.

doi:10.1063/1.351658

Cited by 26 publications

(8 citation statements)

References 31 publications

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“…Furthermore, CL images are used to determine the beam shape, using a dip in the CL image induced by a line scan of the FIB across an n‐GaAs wafer (Itoh et al , 1998). Finally, characterization by CL is used to examine damage created by the FIB (Bever et al , 1992; Vetterli et al , 1995; Furuya & Saito, 1996; Endo et al , 2001). Clearly, the damage introduced by the FIB must be taken into account for FIB‐SEM tomography, as this damage may affect the CL emission and spectral features (Sahoo et al , 2004; Watanabe et al , 2007).…”

Section: Introductionmentioning

confidence: 99%

FIB-SEM cathodoluminescence tomography: practical and theoretical considerations

Winter

Lebbink

Vries

et al. 2011

Journal of Microscopy

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Focused ion beam-scanning electron microscope (FIB-SEM) tomography is a powerful application in obtaining three-dimensional (3D) information. The FIB creates a cross section and subsequently removes thin slices. The SEM takes images using secondary or backscattered electrons, or maps every slice using X-rays and/or electron backscatter diffraction patterns. The objective of this study is to assess the possibilities of combining FIB-SEM tomography with cathodoluminescence (CL) imaging. The intensity of CL emission is related to variations in defect or impurity concentrations. A potential problem with FIB-SEM CL tomography is that ion milling may change the defect state of the material and the CL emission. In addition the conventional tilted sample geometry used in FIB-SEM tomography is not compatible with conventional CL detectors. Here we examine the influence of the FIB on CL emission in natural diamond and the feasibility of FIB-SEM CL tomography. A systematic investigation establishes that the ion beam influences CL emission of diamond, with a dependency on both the ion beam and electron beam acceleration voltage. CL emission in natural diamond is enhanced particularly at low ion beam and electron beam voltages. This enhancement of the CL emission can be partly explained by an increase in surface defects induced by ion milling. CL emission enhancement could be used to improve the CL image quality. To conduct FIB-SEM CL tomography, a recently developed novel specimen geometry is adopted to enable sequential ion milling and CL imaging on an untilted sample. We show that CL imaging can be manually combined with FIB-SEM tomography with a modified protocol for 3D microstructure reconstruction. In principle, automated FIB-SEM CL tomography should be feasible, provided that dedicated CL detectors are developed that allow subsequent milling and CL imaging without manual intervention, as the current CL detector needs to be manually retracted before a slice can be milled. Due to the required high electron beam acceleration voltage for CL emission, the resolution for FIB-SEM CL tomography is currently limited to several hundreds of nm in XY and up to 650 nm in Z for diamonds. Opaque materials are likely to have an improved Z resolution, as CL emission generated deeper in the material is not able to escape from it.

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Section: Introductionmentioning

confidence: 99%

FIB-SEM cathodoluminescence tomography: practical and theoretical considerations

Winter

Lebbink

Vries

et al. 2011

Journal of Microscopy

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“…Nevertheless, the localization of the ion-induced defects on III-V crystals appear considerably improved, of at least a factor of 10, in relevance with all previously published results. 8,9 Finally, we have verified that these patterns (aϭ0.5 m͒ were no more detected when defined on a sample kept at a temperature above 22 K and with a 30 keV ion energy. Indeed for the lattice constant a set to 0.5 m, the sample patterned at 80 K and RT were exhibiting similar characteristics as uniformly implanted samples having no significant remaining PL structures or signal emitted from the QWs.…”

Section: B Sample Kept At 22 K During Irradiationmentioning

confidence: 54%

“…Similar limitations were evidenced with FIB patterned lines on GaAs/AlAs heterostructures and cathodoluminescence characterization. 9 In this case, without annealing procedures, a lateral spreading of implantation induced damage was found to exceed considerably the implanted region. Indeed the damages were spreading 5 m away from the implanted stripes for a dose of 10 12 cm Ϫ2 ͑100 keV Ga ϩ ions͒.…”

Section: Introductionmentioning

confidence: 95%

Focused ion beam patterning of III–V crystals at low temperature: A method for improving the ion-induced defect localization

Schneider

Giérak

Marzin

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…The FIB induced artifacts are described as morphological defects, crystal damage, uncontrolled Ga + implantation, amorphization, material redeposition, mixing of material, radiation damage, changes in surface geometry, and its electronic properties, etc. (Adams, 2006;Barber, 1993;Barna et al, 1999;Bever et al, 1992;Boxleitner et al, 2001;Brezna et al, 2003;Cairney and Munroe, 2003;Frey et al, 2003;Huang, 2004;Inkson et al, 2006;Ishitani et al, 1998Ishitani et al, , 2004McCaffrey et al, 2001;Nord et al, 2002;Perrey et al, 2004;Rajsiri et al, 2002;Reiner et al, 2004;Rubanov and Munroe, 2003Stanishevsky et al, 2002;Vetterli et al, 1995;Wang et al, 2005;Yabuuchi et al, 2004;Yu et al, 2006).…”

Section: Introductionmentioning

confidence: 96%

Surface damage induced by FIB milling and imaging of biological samples is controllable

Drobne

Milani

Lešer

et al. 2007

Microscopy Res & Technique

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Focused ion beam (FIB) techniques are among the most important tools for the nanostructuring of surfaces. We used the FIB/SEM (scanning electron microscope) for milling and imaging of digestive gland cells. The aim of our study was to document the interactions of FIB with the surface of the biological sample during FIB investigation, to identify the classes of artifacts, and to test procedures that could induce the quality of FIB milled sections by reducing the artifacts. The digestive gland cells were prepared for conventional SEM. During FIB/SEM operation we induced and enhanced artifacts. The results show that FIB operation on biological tissue affected the area of the sample where ion beam was rastering. We describe the FIB-induced surface major artifacts as a melting-like effect, sweating-like effect, morphological deformations, and gallium (Ga(+)) implantation. The FIB induced surface artifacts caused by incident Ga(+) ions were reduced by the application of a protective platinum strip on the surface exposed to the beam and by a suitable selection of operation protocol. We recommend the same sample preparation methods, FIB protocol for milling and imaging to be used also for other biological samples.

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Lateral spreading of focused ion-beam-induced damage

Cited by 26 publications

References 31 publications

FIB-SEM cathodoluminescence tomography: practical and theoretical considerations

FIB-SEM cathodoluminescence tomography: practical and theoretical considerations

Focused ion beam patterning of III–V crystals at low temperature: A method for improving the ion-induced defect localization

Surface damage induced by FIB milling and imaging of biological samples is controllable

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