Low dark current InGaAs PIN photodiodes grown by molecular beam epitaxy

Cinguino, P.; Genova, F.; Rigo, C.; Stano, A.

doi:10.1049/el:19850099

Cited by 5 publications

(2 citation statements)

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“…For this purpose, the best results for InGaAs and InAlAs, when selective etching is not required, are obtained with the Br2-CH3COOH etching system, which, even if it shows a somewhat high etch rate, February 198 7 has been found to provide a high quality surface morphology, very uniform mesa profiles in both directions with positive angles, and much less sensitivity to the nonuniformities of the etching mask. Recently, low dark current InGaAs photodiodes have been fabricated using this etching solution for mesa definition (12). For InA1As, the etching solutions studied in this work show a further advantage over those solutions previously proposed (10)--they do not require cooling to 4~ to obtain reliable etching characteristics.…”

Section: Crystallographic Aspects and Device Applicationsmentioning

confidence: 88%

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Chemical Etching Characteristics of InGaAs / InP and InAlAs / InP Heterostructures

Stano

1987

J. Electrochem. Soc.

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The chemical etching characteristics of (001) MBE and LPE InGaAs and InA1As layers grown on InP have been studied for various etching systems: H3PO4: H202, H2SO4:H202:H20, an_d Br2-CH3COOH using photoresist as a mask. The etch profiles were examined on stripes oriented along the [110] and [110] directions and on circular mesa structures. The etch rates and the etch-revealed planes are reported, together with a detailed discussion of the crystallography. Experimentally observed different etching characteristics between LPE and MBE InGaAs layers are reported and discussed. The use of these etching solutions for device fabrication is also briefly discussed.

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Section: Crystallographic Aspects and Device Applicationsmentioning

confidence: 88%

“…The InGaAs samples were grown either by MBE (Sidoped, 1018 cm-3), with the growth conditions previously described (11,12), or by LPE (Sn-doped, 10 '8 cm 3), while the InA1As samples were grown by MBE (Si-doped, 1018 cm -3) (13).…”

Section: Methodsmentioning

confidence: 99%