Low temperature crystallized Ta2O5/Nb2O5 bi-layers integrated into RIR capacitor for 60 nm generation and beyond

Challenges of Ta2O5 as high-k dielectric for nanoscale DRAMs

“…Doped Ta 2 O 5 and/or bi-layers containing Ta 2 O 5 are likely to meet these challenges. (10 nm Ta 2 O 5 /$5 nm Nb 2 O 5 bi-layer has another temperature of crystallization as compared with pure Ta 2 O 5 [14].) The concept of doping high-k oxides is that dopants act as network modifiers, can reduce current and interface state density, can also stabilize the amorphous phase.…”

Preparation and Characterization of NbxOy Thin Films: A Review

“…Also, a comprehensive study has been performed on the pentoxide labelling it as gate dielectrics in complementary metal oxide semiconductors (CMOS) components [35] which as well displays exceptional catalytic qualities. High-κ (kappa) Nb 2 O 5 can be used as a substitute to the traditional gate dielectric of SiO 2 [3,9], so as to satisfy the requirements for miniaturization of the dynamic random-access memory along with the complementary metal oxide semiconductor components [36,37]. The composition of the Nb 2 O 5 films is literally affected by the partial pressure of oxygen and the deposition temperature which may probably lead to an alternation in the dielectric constant [38].…”

Silicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilane

“…Multilayering Nb2O5 with SiO2 films has allowed one to reduce internal mechanical stress in the optical coating [10] and, of course, tailor the refractive index and reflecting properties of the coatings [8][9]. Nb2O5 itself as a dielectric high permittivity metal oxide has been considered for the application in dynamic random access memories [20,21], also when tailored with Ta2O5 or Al2O3 [22][23][24].…”