Optical gain due to the Eu transition in the alloy of Ca1-xEuxGa2S4

Iida, S.; Yamazaki, Makoto; Yamagishi, E.; Hidaka, Chiharu; Takizawa, Takeo

doi:10.1016/j.jpcs.2005.09.057

Cited by 3 publications

(4 citation statements)

References 2 publications

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“…Rare-earth-elements-doped CaGa 2 S 4 has been expected for a new laser medium recently. Infrared laser oscillation was observed in CaGa 2 S 4 :Dy 3+ and optical gain was reported in Ca 0.8 Eu 0.2 Ga 2 S 4 [3,4]. Therefore Ce 3+ -doped CaGa 2 S 4 is also expected for a blue-green tunable laser material [5].…”

mentioning

confidence: 82%

Nanosecond spectroscopy of Ce‐doped CaGa ₂ S ₄

Takayama

Tanaka

Uchiki

et al. 2006

Phys. Status Solidi (c)

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Transient optical loss in a CaGa 2 S 4 :Ce 3+ single crystal was observed by a nanosecond pump-probe spectroscopy. When the probe beam with a wavelength of 460 to 620 nm passed through the excited sample, its intensity reduced to about 0.8 times of the intensity after passing through the unexcited sample. A large excited state absorption cross section of a Ce 3+ ion, σ ESA-prb = 7.4× 10 -17 cm 2 was evaluated from the result of the pump beam energy dependence of the ratio of the probe intensity with pumping to that without pumping. This report suggested that excited state absorption prevents stimulated emission in CaGa 2 S 4 :Ce 3+.

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mentioning

confidence: 82%

Nanosecond spectroscopy of Ce‐doped CaGa ₂ S ₄

Takayama

Tanaka

Uchiki

et al. 2006

Phys. Status Solidi (c)

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“…From the view point of high optical gain character of the emission, application possibility of the system to lasers was reported by us [1,2]. The high gain character, which is related with small concentration quenching of the emission even under high Eu concentrations, would lead to construction of surface-emitting lasers.…”

Section: Introductionmentioning

confidence: 97%

“…The alloy system of Eu x Ca 1-x Ga 2 S 4 shows the visible luminescence due to Eu ions with high quantum efficiency [1]. From the view point of high optical gain character of the emission, application possibility of the system to lasers was reported by us [1,2].…”

Section: Introductionmentioning

confidence: 97%

Thin film formation by rf sputtering with EuGa ₂ S ₄ target and photoluminescence of the prepared films

Dohi

Sumitani

Iida

2006

Phys. Status Solidi (c)

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Thin films were deposited on Si and fused quartz substrates by rf sputtering with EuGa 2 S 4 target. The deposited films were annealed in the mixed atmosphere of S and He, which led crystallization of the film from amorphous phase. Photoluminescence of the annealed films, characteristic to the Eu 2+ ion, was observed with room temperature quantum efficiency of 17%. Decay time constants at room temperature and liquid nitrogen temperature were measured to be 140 ns, and 430 ns, respectively. The latter value is close to the reported radiative lifetime of the EuGa 2 S 4 crystal. Construction possibility of a surface-emitting laser is discussed with data on behaviour of excitation intensity dependent time-resolved spectra under pulsed laser excitation and on surface roughness of the film.

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“…Furthermore, optical gain and laser action were observed in Eu 2+ and Dy 3+ -doped CaGa 2 S 4 , respectively [5][6][7]. Thus, the alkaline earth thiogallates are also attractive as host crystals of laser materials.…”

Section: Introductionmentioning

confidence: 99%

Eu concentration dependence of luminescent properties of Sr1−xEuxGa2S4 phosphors synthesized by polymerized complex sulfurization method

Taniguchi

Honda

2013

Optical Materials

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Optical gain due to the Eu transition in the alloy of Ca1-xEuxGa2S4

Cited by 3 publications

References 2 publications

Nanosecond spectroscopy of Ce‐doped CaGa ₂ S ₄

Nanosecond spectroscopy of Ce‐doped CaGa ₂ S ₄

Thin film formation by rf sputtering with EuGa ₂ S ₄ target and photoluminescence of the prepared films

Eu concentration dependence of luminescent properties of Sr1−xEuxGa2S4 phosphors synthesized by polymerized complex sulfurization method

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Optical gain due to the Eu transition in the alloy of Ca1-xEuxGa2S4

Cited by 3 publications

References 2 publications

Nanosecond spectroscopy of Ce‐doped CaGa 2 S 4

Nanosecond spectroscopy of Ce‐doped CaGa 2 S 4

Thin film formation by rf sputtering with EuGa 2 S 4 target and photoluminescence of the prepared films

Eu concentration dependence of luminescent properties of Sr1−xEuxGa2S4 phosphors synthesized by polymerized complex sulfurization method

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Product

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Nanosecond spectroscopy of Ce‐doped CaGa ₂ S ₄

Nanosecond spectroscopy of Ce‐doped CaGa ₂ S ₄

Thin film formation by rf sputtering with EuGa ₂ S ₄ target and photoluminescence of the prepared films