P-type nitrogen-doped ZnO thin films on sapphire substrates by remote-plasma-enhanced metalorganic chemical vapor deposition

Gangil, Sandip; Nakamura, Atsushi; Ichikawa, Yukimi; Yamamoto, Kenji; Ishihara, Junji; Aoki, Toru; Temmyo, Jiro

doi:10.1016/j.jcrysgro.2006.10.184

Cited by 24 publications

(16 citation statements)

References 10 publications

(22 reference statements)

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“…3 Due to this, p-type conduction is not always obtained even after doping nitrogen as acceptor species. 3 Due to this, p-type conduction is not always obtained even after doping nitrogen as acceptor species.…”

Section: Influence Of Unintentional Doped Carbon On Growth and Propermentioning

confidence: 99%

Influence of unintentional doped carbon on growth and properties of N-doped ZnO films

Chen

Liu

et al. 2008

Journal of Applied Physics

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Articles you may be interested inThermal diffusion of nitrogen into ZnO film deposited on InN/sapphire substrate by metal organic chemical vapor deposition Electrical and optical studies of metal organic chemical vapor deposition grown N-doped ZnO films Unintentional doping and compensation effects of carbon in metal-organic chemical-vapor deposition fabricated ZnO thin films The evolution of optical and electrical properties induced by rapid thermal annealing is studied on nitrogen-doped ZnO samples grown by metal-organic chemical vapor deposition ͑MOCVD͒. Correspondingly, in the Raman spectra carbon cluster related D and G modes have been observed to increase with annealing temperature. The increase in the intensity ratio of D and G modes indicates growing of carbon clusters, revealing an interesting change in unintentional doped carbon, which is a popular impurity in MOCVD grown N-doped ZnO. Substitutional or interstitial carbons in the grains may migrate to grain boundaries to incorporate with some existing carbon clusters to form larger ones. Accordingly, zinc vacancies will then be easily formed as annealing temperature increased, resulting in eminent green band emission at room temperature photoluminescence. The band edge emissions also show significant changes with several shoulders observed by thermal annealing, which can be ascribed to acceptor or donor related emissions. The changes in emissions agree well with the evolution of the electrical property of annealed samples. This study shows that unintentional doped carbon has a great influence on ZnO growth by forming clusters in the grain boundary area and also on the optical and electrical properties by forming C related defects in the grains.

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Section: Influence Of Unintentional Doped Carbon On Growth and Propermentioning

confidence: 99%

Influence of unintentional doped carbon on growth and properties of N-doped ZnO films

Chen

Liu

et al. 2008

Journal of Applied Physics

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“…Similar behavior for ptype ZnO film is reported earlier [37,47]. Table 5 46.55 1.610 9 10 1 3.332 9 10 11 7.494 9 10 2 6.21 9 10 -2 p N-Al codoped ZnO 0.54 1.205 9 10 19 18 2.730 9 10 -2 1.205 9 10 14 5.178 9 10 -1 3.663 9 10 1 p some results of N-doped ZnO film by comparing with the published data [48][49][50][51] and Table 6 shows comparative results of this study with the published data for N-Al codoped ZnO [13][14][15][16][17]. The resistivity value of this study is found to be close to the reported resistivity value [17].…”

Section: Resultsmentioning

confidence: 86%

Comparison of N-doped ZnO and N–Al codoped ZnO thin films deposited by pulsed filtered cathodic vacuum arc deposition

et al. 2014

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N-doped ZnO and N-Al codoped ZnO films are deposited onto glass substrate at room temperature by pulsed filtered cathodic vacuum arc deposition system. The films are characterized by X-ray diffraction, Raman spectra, UV-Vis-NIR spectrophotometer, atomic force microscopy (AFM) and Hall measurements. Films are textured along the (002) direction. AFM images reveal that surface of N-Al codoped ZnO film grown at RT is smoother than that of the N-doped ZnO (ZnO:N) film. Optical band gap of the N-Al codoped ZnO film is higher than that of N-doped ZnO (ZnO:N) film. When N-Al codoped ZnO film is compared to N-doped ZnO film, it is revealed that N-Al codoped ZnO film has a lower hole mobility of 18 cm 2 /V s, a higher hole concentration of 1.205 9 10 19 cm -3 and thus a lower electrical resistivity of 2.730 9 10 -2 ohm cm.

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“…However, the detailed information and related mechanism are not yet clear, which may be an obstacle to realizing high quality ZnO, as well as high doping efficiency of nitrogen at a low growth temperature. Actually, p-type conduction is not always obtained even after doping with nitrogen as acceptor species [5,9] possibly due to the compensation from residual carbon containing complexes [10]. Therefore, the experimental and theoretical analyses performed on the MOCVD-formed ZnO thin films may provide an important clue to understand the incorporation mechanism and possible effects of carbon impurity on p-type doping.…”

Section: Introductionmentioning

confidence: 99%

The influences of O/Zn ratio and growth temperature on carbon impurity incorporation in ZnO grown by metal-organic chemical vapor deposition

Liu

Zhu

et al. 2010

Journal of Crystal Growth

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P-type nitrogen-doped ZnO thin films on sapphire substrates by remote-plasma-enhanced metalorganic chemical vapor deposition

Cited by 24 publications

References 10 publications

Influence of unintentional doped carbon on growth and properties of N-doped ZnO films

Influence of unintentional doped carbon on growth and properties of N-doped ZnO films

Comparison of N-doped ZnO and N–Al codoped ZnO thin films deposited by pulsed filtered cathodic vacuum arc deposition

The influences of O/Zn ratio and growth temperature on carbon impurity incorporation in ZnO grown by metal-organic chemical vapor deposition

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