Photocurrent analysis of a fast Ge p-i-n detector on Si

Oehme, Michael; Werner, Jürgen; Kasper, E.; Klinger, S.; Berroth, Manfred

doi:10.1063/1.2757599

Cited by 28 publications

(9 citation statements)

References 9 publications

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“…As detector the photodiode is reverse biased [16,17] or favorably zero biased [18]. Under forward bias the electrons and holes are injected from their respective highly doped sides into the intrinsic depletion layer and recombine there.…”

Section: Resultsmentioning

confidence: 99%

Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes

Kasper

Oehme

Arguirov

et al. 2012

Advances in OptoElectronics

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Room temperature direct band gap emission is observed for Si-substrate-based Ge p-i-n heterojunction photodiode structures operated under forward bias. Comparisons of electroluminescence with photoluminescence spectra allow separating emission from intrinsic Ge (0.8 eV) and highly doped Ge (0.73 eV). Electroluminescence stems from carrier injection into the intrinsic layer, whereas photoluminescence originates from the highly n-doped top layer because the exciting visible laser wavelength is strongly absorbed in Ge. High doping levels led to an apparent band gap narrowing from carrier-impurity interaction. The emission shifts to higher wavelengths with increasing current level which is explained by device heating. The heterostructure layer sequence and the light emitting device are similar to earlier presented photodetectors. This is an important aspect for monolithic integration of silicon microelectronics and silicon photonics.

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Section: Resultsmentioning

confidence: 99%

Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes

Kasper

Oehme

Arguirov

et al. 2012

Advances in OptoElectronics

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“…The p-n junction is one of the most important structures for carrier extraction, of which the feature characteristic is collecting the electrons and holes from depletion region. When a p-n junction is under illumination, the photo-excited electrons and holes are drifted to the opposite sides of the p-n junction by the built-in field, thus an electrical response generates for photodiode detectors 7 8 . According to this, the most popular photodetectors are based on p-i-n structures.…”

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The enhanced photo absorption and carrier transportation of InGaN/GaN Quantum Wells for photodiode detector applications

Yang

Jiang

et al. 2017

Sci Rep

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We have conducted a series of measurements of resonantly excited photoluminescence, photocurrent and photovoltage on InGaN/GaN quantum wells with and without a p-n junction under reverse bias condition. The results indicate that most of the resonantly excited photo-generated carriers are extracted from the quantum wells when a p-n junction exists, and the photon absorption of quantum wells is enhanced by the p-n junction. Additionally, the carrier extraction becomes more distinct under a reverse bias. Our finding brings better understanding of the physical characteristics of quantum wells with p-n junction, which also suggests that the quantum well is suitable for photodiode detectors applications when a p-n junction is used.

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“…Germanium (Ge) is of special interest because it is nowadays widely accepted as CMOS compatible material [6]. In especial, the integration of high quality Ge layers with low defect densities is of special interest for high mobility channel CMOS technologies [7], optical data communication [8] as well as mediator material to achieve the manufacturing of III-V/Si hybrid devices [9]. The integration of Ge on the Si material platform is intensively pursued by the above mentioned layer transfer techniques but also heteroepitaxy thin film deposition techniques are of importance.…”

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confidence: 99%

Engineered Si wafers: On the role of oxide heterostructures as buffers for the integration of alternative semiconductors

Schroeder

Giussani

Dąbrowski

et al. 2009

Phys. Status Solidi (c)

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Engineered Si wafer systems present an important materials science approach to further improve the performance of Si‐based micro‐ and nanoelectronics. This is due to the potential to integrate alternative semiconductor layers on the mature Si wafer technology platform which are otherwise too expensive or even impossible to grow in bulk form in the required quality and quantity. Ge is attracting increasing research interest because it is for example a promising material for high mobility channel CMOS technologies as well as a mediator material to achieve the manufacturing of III‐V/Si hybrid devices. The integration of Ge on Si wafers is today either achieved by a combination of layer transfer and wafer bonding techniques or by a sequence of subsequent, epitaxial thin film deposition growth steps. In the latter case, the traditional approach to integrate Ge layers of low defect densities is given by the use of compositionally graded SiGe heterostructures. As this approach suffers however from required SiGe buffer thicknesses on the micrometer scale, making integrated circuit processing difficult, research on the development of innovative buffer heteroepitaxy approaches is intensively pursued. A new interesting class of buffer materials with a high degree of flexibility is given by oxide heterostructures. Using the integration of single crystalline Si and Ge on the Si(111) material platform via oxide heterostructures as an example, the flexibility of engineered oxide heterostructures to control important epitaxy parameters is demonstrated. In this study, epitaxial Si(111) and Ge(111) layers were grown on cubic Y2O3(111)/cubic Pr2O3(111)/Si(111) and Pr2O3(111)/Si(111) support systems, respectively. The structural properties of the Si‐on‐Insulator (SOI) and Ge‐on‐Insulator (GOI) heterostructures were characterized in detail by a combination of laboratory‐ and synchrotron‐based methods. As main result, both the epitaxial Si(111) and Ge(111) films were shown to be atomically smooth and single crystalline (i.e. free of stacking twins). Defect engineering approaches need to be applied in future to reduce stacking faults (e.g. microtwins) which are identified as the major defect mechanism in the epitaxial Si(111) and Ge(111) films. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Photocurrent analysis of a fast Ge p-i-n detector on Si

Cited by 28 publications

References 9 publications

Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes

Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes

The enhanced photo absorption and carrier transportation of InGaN/GaN Quantum Wells for photodiode detector applications

Engineered Si wafers: On the role of oxide heterostructures as buffers for the integration of alternative semiconductors

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