Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga<sub>2</sub>O<sub>3</sub>, and diamond

Kim, Munho; Seo, Jung‐Hun; Singisetti, Uttam; Ma, Zhenqiang

doi:10.1039/c7tc02221b

Cited by 223 publications

(107 citation statements)

References 93 publications

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“…[2][3][4][5] Particularly, b-Ga 2 O 3 possesses an intrinsic bandgap of $4.9 eV and so is naturally suitable for solar-blind photodetection without the need for any alloying processes, which makes b-Ga 2 O 3 PDs a better alternative, and therefore have been extensively explored very recently. [6][7][8][9] Among various PD structures, the metal-semiconductormetal (MSM) one is an attractive candidate due to its fabrication simplicity, the need for only one single-dopant active layer, easy integration with readout circuitry, and low parasitic capacitance. 10,11 Moreover, MSM PD typically exhibits high responsivity, which is a critical merit especially for detecting extremely weak signals.…”

mentioning

confidence: 99%

Simultaneously improved sensitivity and response speed of β-Ga2O3 solar-blind photodetector via localized tuning of oxygen deficiency

Qian

Liu

Zhang

et al. 2019

Applied Physics Letters

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Recently, b-Ga 2 O 3 solar-blind photodetectors (PDs) have been extensively investigated for a wide range of civil and military applications. Among them, the metal-semiconductor-metal (MSM) structure is one of the most popular candidates due to the merits of fabrication simplicity, the need for only one single-dopant active layer, easy integration with readout circuitry, high quantum efficiency, etc. However, there is generally a tradeoff between sensitivity and response speed due to the specific internal gain mechanism. In this work, MSM PDs based on the molecular beam epitaxy-grown b-Ga 2 O 3 film were fabricated, and the metal/semiconductor (M/S) interfacial properties were tailored through the low-energy Ar-plasma pretreatment, resulting in the localized oxygen deficiency and a sharper interface. Accordingly, the PD sensitivity was dramatically improved, and the advantage of internal gain, i.e., high quantum efficiency, was preserved or became even larger. For example, the 60-W pretreated sample exhibited a high responsivity (R) of 8.41 A/W and a large specific detectivity (D Ã) of 1.24 Â 10 14 Jones, both increasing by one order of magnitude in comparison with the untreated sample. More interestingly, the response speed was unexpectedly accelerated, which is ascribed to the rapid and direct tunneling of electrons at the M/S interface as well as to the reduction in RC time constant based on the data analysis and the underlying physical principle discussion. The treatment conditions can be further optimized to counterbalance some side effects. These findings reveal an efficient technique for comprehensively improving the performance of b-Ga 2 O 3 solar-blind PDs.

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confidence: 99%

Simultaneously improved sensitivity and response speed of β-Ga2O3 solar-blind photodetector via localized tuning of oxygen deficiency

Qian

Liu

Zhang

et al. 2019

Applied Physics Letters

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“…Representative NMs include group IV (Si and Ge), group III-V (GaAs, InP, and InAs, etc. ), and wide band-gap (GaN and 4H-SiC) semiconductors [52][53][54][55][56][57][58][59]. Therefore, it is very important to secure their original substrates for supplying highquality NMs.…”

Section: Quasi-2d Nanomembranes (Nms)mentioning

confidence: 99%

Low dimensional freestanding semiconductors for flexible optoelectronics: materials, synthesis, process, and applications

Seo

Swinnich

Zhang

et al. 2020

Materials Research Letters

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In this review, the primary focus is the recent advances in the development of freestanding inorganic crystalline semiconductors and their manipulation technology for flexible optoelectronic applications. We firstly cover the details of the growth and processing techniques of freestanding inorganic crystalline semiconductors in various dimensions and their material property under strain condition. Finally, fabrication processes and opto-electrical properties of flexible optoelectronics are introduced. Future research directions are also discussed, including further enhancement of device performance, building more types of optoelectronic devices on flexible substrates, and process integration for the advanced optoelectronic circuits and systems.

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“…For example, the metal oxide-based photodetectors do not oxidize easily and exhibit sensitive response. Furthermore, they are easy to operate and can be made small in size [1,2]. Hence, wide bandgap metal oxides and their devices have attracted much research attention in recent years.…”

Section: Introductionmentioning

confidence: 99%

High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction

et al. 2020

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Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electronic and optical properties. In this work, deep UV photodetector based on NiO/β-Ga 2 O 3 heterojunction was developed and investigated. The β-Ga 2 O 3 layer was prepared by magnetron sputtering and exhibited selective orientation along the family of (2 01) crystal plane after annealing. The photodetector demonstrated good performance with a high responsivity (R) of 27.43 AW −1 under a 245-nm illumination (27 μWcm −2) and the maximum detectivity (D*) of 3.14 × 10 12 cmHz 1/2 W −1 , which was attributed to the p-NiO/n-β-Ga 2 O 3 heterojunction.

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Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga₂O₃, and diamond

Abstract: Free-standing single crystalline semiconductor membranes have gained intensive attention over the last few years due to their versatile usage in many applications.

Cited by 223 publications

References 93 publications

Simultaneously improved sensitivity and response speed of β-Ga2O3 solar-blind photodetector via localized tuning of oxygen deficiency

Simultaneously improved sensitivity and response speed of β-Ga2O3 solar-blind photodetector via localized tuning of oxygen deficiency

Low dimensional freestanding semiconductors for flexible optoelectronics: materials, synthesis, process, and applications

High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction

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Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga2O3, and diamond

Abstract: Free-standing single crystalline semiconductor membranes have gained intensive attention over the last few years due to their versatile usage in many applications.

Cited by 223 publications

References 93 publications

Simultaneously improved sensitivity and response speed of β-Ga2O3 solar-blind photodetector via localized tuning of oxygen deficiency

Simultaneously improved sensitivity and response speed of β-Ga2O3 solar-blind photodetector via localized tuning of oxygen deficiency

Low dimensional freestanding semiconductors for flexible optoelectronics: materials, synthesis, process, and applications

High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction

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Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga₂O₃, and diamond