Resistive Switching of SnO<sub>2</sub> Thin Films on Glass Substrates

Almeida, Sergio F.; Aguirre, Brandon Adrian; Marquez, Noel; McClure, Joshua P.; Zubía, David

doi:10.1080/10584587.2011.575015

Cited by 14 publications

(4 citation statements)

References 8 publications

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“…The forming process was made twice before observing the resistive switching. This forming voltage for SnO 2 in this work is higher than the reported in reference [14] (4-5 volt) for other metals used with tin oxide, because of the larger area of the top electrode used in this work. As a result of the forming process the devices switched to low resistance state (LRS) i.e the resistance became (105 Ω) with a drop voltage of (0.4 V), this resistance stay at its low value until increasing the applied voltage to a value of range (0.68 -1.5 V) called Reset voltage with the same polarity a sudden drop of current is achieved and the resistance of the cell is switched to high resistance state (HRS) the current dropped to about (127-150 µA) (see table 3).…”

Section: 2-current -Voltage Characteristicscontrasting

confidence: 64%

Preparation and Study of SnO2 MOM Structure by The Thermal Vacuum Evaporation Deposition

Ali

Ghazal

2014

(AREJ)

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Resistive switching random access memory is one of the novel nonvolatile memory technologies that, has a promising future for replacing the conventional FLASH memory. In this work a detailed study made about the types of operations and understanding the mechanisms of the resistance changing in the device. SnO 2 thin films are deposited by using Thermal Vacuum Evaporation deposition method at room temperature on Al/glass substrate to produce Al/SnO 2 /Al/glass device structure. Optical properties are taken to measure the optical band gap of SnO 2. Resistive switching is observed by taking current voltage readings at room temperature. RRAM cell showed unipolar resistive switching behavior with no overlapping between reset and set voltage (1.5V, 2.5V respectively) ,also between high and low resistance states (7.7KΩ,106Ω). Good retention and endurance are obtained and the ratio between HRS to LRS has been found to be at least (41) within 21 cycles.

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Section: 2-current -Voltage Characteristicscontrasting

confidence: 64%

Preparation and Study of SnO2 MOM Structure by The Thermal Vacuum Evaporation Deposition

Ali

Ghazal

2014

(AREJ)

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“…Further, the memristive devices are fabricated on glass substrates, which have low thermal conductivities, compared to silicon substrates [15]. The glass substrates favor the diffusion of oxygen vacancies [16]. An improved resisting switching performance in terms of higher memory window (MW), better endurance characteristics and lower value of reset voltages are reported in various oxides, such as HfO x [15], SnO 2 [16], TaO x [17] and MoO 3 [18].…”

Section: Introductionmentioning

confidence: 99%

“…The glass substrates favor the diffusion of oxygen vacancies [16]. An improved resisting switching performance in terms of higher memory window (MW), better endurance characteristics and lower value of reset voltages are reported in various oxides, such as HfO x [15], SnO 2 [16], TaO x [17] and MoO 3 [18]. This work mainly focuses on the memristive devices which are fabricated on the silicon substrates.…”

Section: Introductionmentioning

confidence: 99%

Modulating the Filamentary-Based Resistive Switching Properties of HfO2 Memristive Devices by Adding Al2O3 Layers

et al. 2022

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The resistive switching properties of HfO2 based 1T-1R memristive devices are electrically modified by adding ultra-thin layers of Al2O3 into the memristive device. Three different types of memristive stacks are fabricated in the 130 nm CMOS technology of IHP. The switching properties of the memristive devices are discussed with respect to forming voltages, low resistance state and high resistance state characteristics and their variabilities. The experimental I–V characteristics of set and reset operations are evaluated by using the quantum point contact model. The properties of the conduction filament in the on and off states of the memristive devices are discussed with respect to the model parameters obtained from the QPC fit.

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“…2 However, in the case of stoichiometric or nonstoichiometric tin oxide (SnO x ), the hybridized orbitals and increased dispersion at the top of the valence band will lead to an enhancement in hole mobility. 6,7 However, to the best of our knowledge, there are few reports on RS behavior and its conduction mechanism of RRAM-based SnO x . 4 If an excess of oxygen atoms exist in SnO, SnO x is formed.…”

Section: Introductionmentioning

confidence: 99%

Investigation of resistive switching behavior of Ag/SnO_x/ITO device

Chen

Huang

2015

J. Micro/Nanolith. MEMS MOEMS

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SnO x thin film was deposited by reactive magnetron sputtering and the resistance switching behavior of Ag∕SnO x ∕ITO was investigated. The endurance testing indicates that HRS resistance decreases with an increase in the number of cycles. After annealing, the memory performance is enhanced, and the ratio of the device resistance of HRS and LRS increases greatly. The abnormal transformation sequence from HRS to LRS was observed for the annealed device and can be explained by electron trapping and detrapping based on the analysis of x-ray diffraction and the Raman spectrum. The temperature-dependent I − V measurement indicates that the thermal activation process is responsible for the temperature range of 300 to 200 K; however, the carrier transport can be ascribed to the nearest-neighbor hopping conduction mechanism for the temperature range of 200 to 100 K. The general conduction mechanism of Ag∕SnO x ∕ITO device can be elucidated by the trap-controlled space charge limited conduction model, and the conductive schematic in the SET and RESET processes has been given. Downloaded From: http://nanolithography.spiedigitallibrary.org/ on 06/04/2015 Terms of Use: http://spiedl.org/terms J. Micro/Nanolith. MEMS MOEMS 024501-2 Apr-Jun 2015 • Vol. 14(2) Chen and Huang: Investigation of resistive switching behavior of Ag∕SnO x ∕ITO device Downloaded From: http://nanolithography.spiedigitallibrary.org/ on 06/04/2015 Terms of Use: http://spiedl.org/terms Chen and Huang: Investigation of resistive switching behavior of Ag∕SnO x ∕ITO device Downloaded From: http://nanolithography.spiedigitallibrary.org/ on 06/04/2015 Terms of Use: http://spiedl.org/terms Chen and Huang: Investigation of resistive switching behavior of Ag∕SnO x ∕ITO device Downloaded From: http://nanolithography.spiedigitallibrary.org/ on 06/04/2015 Terms of Use: http://spiedl.org/terms Chen and Huang: Investigation of resistive switching behavior of Ag∕SnO x ∕ITO device Downloaded From: http://nanolithography.spiedigitallibrary.org/ on 06/04/2015 Terms of Use: http://spiedl.org/terms Chen and Huang: Investigation of resistive switching behavior of Ag∕SnO x ∕ITO device Downloaded From: http://nanolithography.spiedigitallibrary.org/ on 06/04/2015 Terms of Use: http://spiedl.org/terms

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Resistive Switching of SnO₂ Thin Films on Glass Substrates

Cited by 14 publications

References 8 publications

Preparation and Study of SnO2 MOM Structure by The Thermal Vacuum Evaporation Deposition

Preparation and Study of SnO2 MOM Structure by The Thermal Vacuum Evaporation Deposition

Modulating the Filamentary-Based Resistive Switching Properties of HfO2 Memristive Devices by Adding Al2O3 Layers

Investigation of resistive switching behavior of Ag/SnO_x/ITO device

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Resistive Switching of SnO2 Thin Films on Glass Substrates

Cited by 14 publications

References 8 publications

Preparation and Study of SnO2 MOM Structure by The Thermal Vacuum Evaporation Deposition

Preparation and Study of SnO2 MOM Structure by The Thermal Vacuum Evaporation Deposition

Modulating the Filamentary-Based Resistive Switching Properties of HfO2 Memristive Devices by Adding Al2O3 Layers

Investigation of resistive switching behavior of Ag/SnOx/ITO device

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Resistive Switching of SnO₂ Thin Films on Glass Substrates

Investigation of resistive switching behavior of Ag/SnO_x/ITO device