Role of defect relaxation for trap-assisted tunneling in high-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>κ</mml:mi></mml:math>thin films: A first-principles kinetic Monte Carlo study

Jegert, G.; Popescu, Dan; Lugli, Paolo; Häufel, Martin Johannes; Weinreich, Wenke; Kersch, Alfred

doi:10.1103/physrevb.85.045303

Cited by 23 publications

(12 citation statements)

References 55 publications

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“…These calculations suffered, however, from the underestimated band-gap problem. More recent studies employed the most advanced methods including GW, screened exchange, and weighted density approximations as well as the nonlocal exchange density functionals confirmed the initial predictions [5,[47][48][49][50][51]. They also demonstrated that oxygen vacancies in m-HfO 2 can have up to 5 charge states, ranging from V 2+ to V 2- [47].…”

Section: Oxygen Vacancy Defects In M-hfosupporting

confidence: 55%

Models of oxygen vacancy defects involved in degradation of gate dielectrics

Shluger¹,

McKenna

2013

2013 IEEE International Reliability Physics Symposium (IRPS)

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Capture and emission of carriers by point defects in gate dielectrics, such as SiO 2 and HfO 2 , and at their interfaces with the substrate is thought to be responsible for the performance and reliability issues in MOS devices, in particular, 1/f noise, negative bias temperature instability (NBTI), and longterm dielectric reliability and degradation. The ultra-thin silicon dioxide layer present at the interface between Si and high-k films plays a critical role in the performance of high-k gate oxide stacks. However, detailed atomistic models relating device electrical characteristics to the properties of defects in gate dielectrics are only starting to emerge. We review some of the theoretical models proposed for oxygen deficient defects in silica and hafnia and their charge trapping behavior. These models are related to physical characterization of degradation processes in CMOS devices.

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Section: Oxygen Vacancy Defects In M-hfosupporting

confidence: 55%

Models of oxygen vacancy defects involved in degradation of gate dielectrics

Shluger¹,

McKenna

2013

2013 IEEE International Reliability Physics Symposium (IRPS)

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“…[19][20][21]. The most recent model that is best comparable to the one presented here is the statistical model reported by Vandelli et al 22 and Padovani 23,24 for technologically promising SiO 2 /HfO 2 structures.…”

Section: Methods -Kmc-model Of Al/alo X /Aumentioning

confidence: 90%

Kinetic Monte Carlo of transport processes in Al/AlOx/Au-layers: Impact of defects

et al. 2016

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Ultrathin films of alumina were investigated by a compact kMC-model. Experimental jV-curves from Al/AlOx/Au-junctions with plasma- and thermal-grown AlOx were fitted by simulated ones. We found dominant defects at 2.3-2.5 eV below CBM for AlOx with an effective mass mox∗=0.35 m0 and a barrier EB,Al/AlOx≈2.8 eV in agreement with literature. The parameterization is extended to varying defect levels, defect densities, injection barriers, effective masses and the thickness of AlOx. Thus, dominant charge transport processes and implications on the relevance of defects are derived and AlOx parameters are specified which are detrimental for the operation of devices.

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“…It is worth noting that the experimental data measured at a low electric field were ignored in our simulation as they were attributed to deep traps [19]. Only the shallow trap level, which provided the dominant leakage path formed by oxygen vacancies, was considered [20].…”

Section: Methodsmentioning

confidence: 99%

“…( c ) Calibrated simulation data compared with experimental data [21]. It is worth noting that the leakage current at a low bias is ignored, as only the shallow trap level, which originates from oxygen vacancies, is considered [20].…”

Section: Figurementioning

confidence: 99%