2016
DOI: 10.1021/acsnano.5b07844
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Splitting of Interlayer Shear Modes and Photon Energy Dependent Anisotropic Raman Response in N-Layer ReSe2 and ReS2

Abstract: We investigate the interlayer phonon modes in N-layer rhenium diselenide (ReSe2) and rhenium disulfide (ReS2) by means of ultralow-frequency micro-Raman spectroscopy. These transition metal dichalcogenides exhibit a stable distorted octahedral (1T') phase with significant in-plane anisotropy, leading to sizable splitting of the (in-plane) layer shear modes. The fan-diagrams associated with the measured frequencies of the interlayer shear modes and the (out-of-plane) interlayer breathing modes are perfectly des… Show more

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Cited by 156 publications
(205 citation statements)
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“…Furthermore, polarized Raman characterization was implemented to explore the polarization dependence due to the reduced symmetry of the orthorhombic phase. The authors inspected that the orthorhombic phase SnS nanosheets exhibit strong anisotropic Raman response similar with black phosphorous150 and ReS 2 151, 152, 153, 154. The parallel‐polarization configuration strongly suggests that the A 1g mode (190.7 cm −1 ) can be employed to detect crystallographic orientation of the SnS flakes because of the A 1g mode reaches the maximum as illumination light polarization is parallel to armchair direction of the SnS flakes, which may also exist in other group IV orthorhombic phases such as SnSe, GeS, and GeSe.…”
Section: Preparation Methods and Characterizationsmentioning
confidence: 99%
“…Furthermore, polarized Raman characterization was implemented to explore the polarization dependence due to the reduced symmetry of the orthorhombic phase. The authors inspected that the orthorhombic phase SnS nanosheets exhibit strong anisotropic Raman response similar with black phosphorous150 and ReS 2 151, 152, 153, 154. The parallel‐polarization configuration strongly suggests that the A 1g mode (190.7 cm −1 ) can be employed to detect crystallographic orientation of the SnS flakes because of the A 1g mode reaches the maximum as illumination light polarization is parallel to armchair direction of the SnS flakes, which may also exist in other group IV orthorhombic phases such as SnSe, GeS, and GeSe.…”
Section: Preparation Methods and Characterizationsmentioning
confidence: 99%
“…[20] However, the existence of lacked interlayer coupling was put into debate when several groups reported the existence of polytypism and strong interlayer coupling in ReS2 layers. [53][54][55] More extensive study is needed to resolve this.…”
Section: Interlayer Coupling and Polytypismmentioning
confidence: 99%
“…[53,54] However, these peaks are absent in monolayer, implying that the peaks originated from the vibrations between the two layers. [55] The Raman peak at 28 cm -1 was assigned to breathing mode, while the peaks at 13 and 16.5 cm -1 were asigned to parallel shear modes (S||) and vertical shear modes (S┴),…”
Section: Low Frequency Vibrational Modes In Res2mentioning
confidence: 99%
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“…[15] The dependence of Raman spectroscopy on the excitation energy may provide further information of the material properties, such as Davydov splitting and exciton-phonon coupling under resonant condition. [17][18][19][20] However, previous Raman spectroscopy studies in MoS 2 with electrostatic (2 of 6) 1701039 www.small-journal.com doping have not addressed the influence of excitation energy on the phonon behavior. Here, we present our results on gate-tunability of phonon properties using resonant Raman spectroscopy.…”
Section: Introductionmentioning
confidence: 99%