Spreading Resistance as a Function of Frequency

Dickens, L.E.

doi:10.1109/tmtt.1967.1126383

Cited by 77 publications

(31 citation statements)

References 2 publications

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“…On the z-axis (η=1) the potential and the electric field are given by Eqs. (6) and (7) where V 0 is the potential of the contact relative to zero at infinite ξ (Dickens, 1967). For large values of ξ in three-dimensions the surfaces of constant potential approach the concentric spheres as seen in the first model, and on the z-axis for |z|>>a, Eq.…”

Section: Second Model: Circular Electrode At the Surface Of The Semicmentioning

confidence: 92%

“…It is surprising that this model is used with SSRM (Dickens, 1967) because our first model allows for the actual insertion of the probe and has a much simpler solution. However, the second model may be more suitable for SFCM because it is consistent with a current density that is normally incident at the surface of the sample.…”

Section: Second Model: Circular Electrode At the Surface Of The Semicmentioning

confidence: 99%

See 1 more Smart Citation

Resolution in Carrier Profiling Semiconductors by Scanning Spreading Resistance Microscopy and Scanning Frequency Comb Microscopy

Hagmann

Mousa

Yarotski

2017

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High resolution measurements of the carrier profile in semiconductor devices is required as the semiconductor industry progresses from the 10-nm lithography node to 7-nm and beyond. We examine the factors which determine the resolution of the present method of scanning spreading resistance microscopy as well as such factors for the newer method of scanning frequency comb microscopy that is now under development. Also, for the first time, we consider the sensitivity of both methods to the location of heterogeneities in the semiconductor. In addition, mesoscopic effects on these measurements are considered for the first time. Two simple analytical models are extended to study the sensitivity to heterogeneities as well as mesoscopic effects.

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Section: Second Model: Circular Electrode At the Surface Of The Semicmentioning

confidence: 92%

Section: Second Model: Circular Electrode At the Surface Of The Semicmentioning

confidence: 99%

Resolution in Carrier Profiling Semiconductors by Scanning Spreading Resistance Microscopy and Scanning Frequency Comb Microscopy

Hagmann

Mousa

Yarotski

2017

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show abstract

“…Three versions of the SB13T1 chip were fabricated with anode diameters of 12, 13 and 14 µm. We calculated a series resistance of 0.8 Ω per varactor (13 µm anodes) which includes contributions from the spreading resistance, epitaxial layer resistance, substrate resistance and resistance in the ohmic contacts [9]. There is some degree of uncertainty in the series resistance calculation.…”

Section: Design Methodologymentioning

confidence: 99%

A high-power fixed-tuned millimeter-wave balanced frequency doubler

Porterfield

Crowe

Bradley

et al. 1999

IEEE Trans. Microwave Theory Techn.

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“…The series impedance of the diode due to the un-depleted region of the EPI layer, SUB layer, and Ohmic contact are calculated based on the anode and Ohmic contact area, depletion width, thickness and the associated conductivity of both EPI and SUB layers. For the SUB layer, the impedance due to current spreading and skin effect are considered [5]. The influence of displacement current and charge carrier inertia effects [6] within the SUB layer are represented by using a frequency dependent conductivity.…”

Section: Introductionmentioning

confidence: 99%