The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene)

Abstract

Articles you may be interested inPolarization behavior of poly(vinylidene fluoride-trifluoroethylene) copolymer ferroelectric thin film capacitors for nonvolatile memory application in flexible electronics J. Appl. Phys. 108, 094102 (2010); 10.1063/1.3500428 Transparent photostable ZnO nonvolatile memory transistor with ferroelectric polymer and sputter-deposited oxide gate Electrical investigations on metal/ferroelectric/insulator/semiconductor structures using poly[vinylidene fluoride trifluoroethylene] as ferroelectric layer for organic nonvolatile memory applications Comparative electrical bistable characteristics of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer based nonvolatile memory device architectures Appl. Phys. Lett. 93, 182902 (2008); 10.1063/1.3013835Low-voltage operation of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer capacitors and metalferroelectric-insulator-semiconductor diodes

Metal oxide semiconductor thin-film transistors for flexible electronics

“…114,155 Since standard PI exhibits a yellowish to brownish color, other polymeric substrates have been introduced to benefit from their transparency in the visual wavelength range. These materials, which are, in general, also cheaper and more easily available, include PET, 29,69,96,165,171,180,184,188 polyethylene naphthalate (PEN), 38,40,41,134,136,139,149,153,158,163,[166][167][168]173,181,202 polyetheretherketone (PEEK), 203 polycarbonate (PC), 154,157 polypropylene (PP) based synthetic paper, 204 parylene, 80,141 polyethersulfone (PES), 178 water-soluble polyvinyl alcohol (PVA), 82 as well as polydimethylsiloxane (PDMS). 78,132,147,[205][206][207] In particular, PDMS is also stretchable and biocompatible, but at the same time hard to process using standard fabrication techniques.…”

Non-volatile organic memory with sub-millimetre bending radius

“…Although significant progress has been made in improving certain characteristics of ferroelectric polymer memories [30][31][32][33][34][35] , only a few works have addressed mechanically flexible Fe-FETs in which characteristic ferroelectric switching has been examined under a relatively mild bending radius on the order of a few millimetres [36][37][38] . Besides ferroelectric memories, most of the previous non-volatile memories are categorized as bendable devices when their bending radii are much greater than 1 mm (Supplementary Table 1).…”

“…In particular, high-performance flexible non-volatile memories based on various data storage principles such as resistive type [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] , flash 4,[25][26][27][28][29] and ferroelectric [30][31][32][33][34][35][36][37][38][39][40] hold great promise in a variety of emerging applications ranging from mobile computing to information management and communication. While the recent advances in this area are impressive, novel organic materials and electronic device structures that can be tightly rolled, crumpled, stretched, sharply folded and unfolded repeatedly without any performance degradation still need to be developed.…”

Nonvolatile organic field-effect transistors fabricated on Al foil substrates

“…There is a trade-off relation between performance and cost of fabrication. FeFETs with metal-oxide semiconductors exhibit high on/off ratios and mobility [5,6]. However, they require an expensive process such as sputtering or high temperature annealing, and only a few semiconductor materials can be deposited by a solution process.…”