The technology of modeling a field-effect transistor in the CAD system COMSOL Multiphysics is considered. The possibilities of CAD, its methods of graphical construction of the model and methods of modeling the behavior of the model are being studied. The object of study is the MOS transistor, its scope, operation and a mathematical model that can be used in designing its operation. The Shikhman-Hodges model, input and output parameters are determined, the degree of its adequacy to a real transistor is set, the main parameters are determined, with the help of which it is possible to conduct a study of a field-effect transistor, its current-voltage characteristic. A transistor model is built in the mode of operation in the mode of small-signal amplifiers, replacing it with a linear four-port model, it is described when this model can be applied when simulating the operation of the device.

The article discusses the simulation of the operation of a diode based on the compiled electrical circuit, and also considers the analysis of the operation of the dido under various operating conditions using the AnyDynamics 8 computer simulation program. Various approaches to the concept of modeling, model, and mathematical model are considered. The classification of models of semiconductor devices, current-voltage characteristic (CVC) and device operation scheme are evaluated. The physical properties of the diode are considered, then a transition is made to the analysis of the operation of the diode in a physical model, and on its basis a mathematical model of the diode is built, since the model works with small changes in current and voltage, then the transition is made to a low-signal model and a system of differential equations, behavior of an ideal diode. Classes of elementary elements are being developed, from which it is possible to build an electronic circuit, diode, resistor, capacitor, coil. A circuit is determined with the help of which it is possible to simulate the operation of a circuit with a connected ideal diode. The result of the work of the electrical circuit in the program AnyDynamics 8 was the creation o behavior of an ideal diode. Analysis of the obtained graphs in the future will allow you to perform modeling and analysis of the operation of an ideal diode.

Definitions are given and the difference between positive and negative algebra of logic is indicated. It is noted that when switching from positive logic to negative, the elements of "Schaeffer's Stroke" and "Pierce's Arrow" change places. Similarly, conjunction changes with disjunction. The inverter retains its property regardless of its application in positive or negative logic. The laws and rules valid for the negative algebra of logic are presented. The method of transition from the positive algebra of logic to the negative one is presented. Elements of positive and negative logic are compared. On the basis of logic functions: (AᴧBᴧC)ᴧDvAᴧ(BᴧCᴧD)vAᴧ(BᴧC)ᴧDv(AᴧB)ᴧ(CᴧD), implemented by direct optimized, minimal, options matching device, as well as, the final options in bases 2-NOT-OR (2-AND-NOT), 4-NOT-OR (4-AND-NOT) for negative logic. The voltage table of K155LE1, K155LE3 microcircuits is presented. The truth table of K155LE1, K155LE3 microcircuits in negative logic algebra (as an element AND-NOT or NOT-OR) is presented. Truth tables of K176LE5, K176LE6 microcircuits are shown in positive logic algebra (OR-NOT). The voltage table of K176LE5, K176LE6 microcircuits is shown. The truth table of K176LE5, K176LE6 microcircuits is shown in negative logic algebra (as an AND-NOT or NOT-OR element). elements of negative logic. Conclusion about the results.

The fundamental laws of the positive algebra of logic are considered, including the rules relating to the elements of equivalence and non-equivalence. Logic gates used in practice are presented. The whole set of standard schemes is implemented, in particular, the frontal version, minimized, in the "OR–NOT" basis, in the "AND–NOT" basis based on the initial logical dependence: ¬(¬(A¬B) × ¬(¬CD) + ¬(¬AB) × ¬(C¬D)) + ¬(¬(AB) × ¬(CD) + ¬(¬A¬B) × ¬(¬C¬D)) . A combination device based on K176LE5 chips has been designed. It is noted that the implementation of this function requires at least 3 chips in the Pier basis, which is not optimal in terms of reliability and weight and size indicators. The transition from the minimized variant to the basis of "Non-Equivalence" + "Conjunction", as well as the basis of "Equivalence" + "Pierce function" is carried out. The results of the search for existing chips that implement the functions "Exclusive OR", "AND", "Exclusive OR–NOT" and "OR-NOT" are presented. 4 groups of chips were found, such as: chips based on logic with emitter coupling (ECL), based on transistor-transistor logic (TTL), based on a series of CMOS chips: with a supply voltage of 5-15 V, and also with a supply voltage of 3-5 V. The corresponding descriptions of each of the MC10H1xx chips (group 1 series); K155xx, xx74xx (group 2 series); K561xx, CD40xxxx (group 3 series); SN74LVCxxx (group 4 series) are presented. Implementation options for these groups of chips in both bases are presented. The cost analysis of the applied microcircuits is made. The calculation of the final cost of products is presented. The conclusion is made about the expediency of using one or another group of microcircuits, depending on the initial requirements set.

The work is devoted to the study of radiation effects on FRAM memory chips. The effects of heavy charged particles entering the microcircuits are considered, the results in static and dynamic modes are analyzed. In statistical mode, the sensitivity of FRAM did not show any dependencies on the data pattern, but showed a relationship with fluence. In dynamic mode, the order of access to memory cells does not affect the sensitivity of memory. The dependences of the consumption current on the radiation dose and the annealing time after irradiation are given. An effects map is shown showing a two-band area sensitive to the laser. According to its relative area, this is the peripheral logic of the device. Studies have confirmed the usefulness of only a few effect maps. This is consistent with the results of tests for exposure to heavy charged particles.