The article is devoted to the study of radiation effects on non-volatile memory. The basis of non-volatile memory with high speed is the ferroelectric effect. The paper describes the principle of operation of FRAM memory, considers the characteristics of various options for the implementation of FRAM. Particular attention is paid to the description of experimental studies of the resistance of FRAM to the effects of ionization radiation from outer space. PZT-FRAMs from three manufacturers, Krysalis Corporation, National Semiconductor Corporation, and Sandia National Laboratories, were considered. The paper illustrates the dependences of the switching charge under the influence of X-rays, the charge change during irradiation and annealing at low temperatures, plots of Hysteresis loops, etc. The influence of neutrons on PZT FRAM was studied by measuring the total switching charge observed when measuring the Hysteresis loop; residual charge; effect on repeated read/write cycles. The experiment involved three samples with different PZT films 240, 250, and 400 nm thick.

The analysis of information on the stability of the electronic component base (ECB) in the development of radio-electronic equipment (REE) of spacecraft (spacecraft) is an important and urgent task. The paper considers the main components of the approaches of foreign organizations developing radio space technology to ensure its radiation resistance. The design approaches of Thales Alenia Space, Airbus Defense and Space, and the European Space Agency are presented. The article outlines the main directions for optimizing the procedures for the preliminary selection of ECB, which consist in ensuring the required resistance of REE SC at the ECB level with ensuring the reliability of data on durability, in minimizing the costs of applying resistance enhancement measures (through the use of a promising ECB with increased resistance characteristics), to replace ECB.

The work is devoted to the study of radiation effects on FRAM memory chips. The effects of heavy charged particles entering the microcircuits are considered, the results in static and dynamic modes are analyzed. In statistical mode, the sensitivity of FRAM did not show any dependencies on the data pattern, but showed a relationship with fluence. In dynamic mode, the order of access to memory cells does not affect the sensitivity of memory. The dependences of the consumption current on the radiation dose and the annealing time after irradiation are given. An effects map is shown showing a two-band area sensitive to the laser. According to its relative area, this is the peripheral logic of the device. Studies have confirmed the usefulness of only a few effect maps. This is consistent with the results of tests for exposure to heavy charged particles.

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The radiation impact of outer space has an impact on electronic equipment and their characteristics change. The paper considers the simulation of the process of motion of holes generated in the oxide, which cause local deformation of the potential field of the lattice. Jumps of polarons make the motion of holes dispersed and highly dependent on temperature and oxide thickness. The article presents the temperature dependences of the voltage shift after a single radiation pulse. When holes move to the Si/SiO2 interface, some of the holes are captured by traps. The effect of the influence of the capture cross section on the increase in holes in traps is noticeable in the electrical dependence of the increase in the number of oxide traps immediately after irradiation. The graphs of the dependence of the threshold voltage shift due to oxide traps on the electric field in the oxide are plotted in this work. Immediately after its appearance, the charge of oxide traps begins to be neutralized. To study this process, time, temperature, and electrical dependences are plotted, and the ratio of trapped electrons to the number of trapped holes is shown for dry and wet gate oxide technologies at different oxide thicknesses. Thus, the influence of temperature and radiation influences on the motions of holes and oxide traps in semiconductor structures is shown.