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lhis paper presents a new method for detecting defect and fabrication variations in both digital and analog CMOS circuits by simultaneously puking the power supply raik and analyzing the temporal andlor the spectral characteristics of the resulting transient rail currents. lhe method presented has a distinct advantage over other forms of iDD testing because it requires a single test vector to excite and expose the presence of a defect or irregular fabrication process condition. lhis paper presents data fhom simulations and defective IC's supporting this technique.

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