No abstract

Developments over the last 15 years in the areas of materials and devices have finally delivered competitive Ill-V MOSFETs with high mobility channels. This paper briefly reviews the above developments, discusses properties of the GdGaO/ Ga2O3 MOS systems, presents GaAs MOSFET DC and RF data, and concludes with an outlook for high indium content channel MOSFETs. GaAs based MOSFETs are potentially suitable for RF power amplification, switching, and front-end integration in mobile and wireless applications while MOSFETs with high indium content channels are of interest for future CMOS applications.

High-NMOSFET structures designed for enhancement mode operation have been fabricated with mobilities exceeding 6000 cm 2 Vs. The NMOSFET structures which have been grown by molecular beam epitaxy on 3-in semi-insulating GaAs substrate comprise a 10 nm strained InGaAs channel layer and a high-dielectric layer ( = 20). Electron mobilities of 6000 and 3822 cm 2 Vs have been measured for sheet carrier concentrations of 2-3 10 12 and = 5 85 10 12 cm 2 , respectively. Sheet resistivities as low as 280 sq have been obtained.

No abstract

No abstract