A one-step synthesis of adsorbed alkoxides from alkyl nitrites dosed on Cu(100) is illustrated using methyl nitrite (CH3ONO) to form methoxide (CH3O) and tert-butyl nitrite (t-C4H9ONO) to form tert-butoxide (t-C4H9O). Compared with an alternative, dosing CH3OH on an O-covered Cu surface, only minor differences in the concentration and local chemical environment of CH3O are evident. The potential energy profiles associated with the two synthesis methods are contrasted, and the key role played by the weak RO−NO bond is emphasized.

We have studied the oxidation of Si nanocrystals as a function of oxidizing ambient, temperature, time, and initial nanocrystal size using x-ray photoelectron spectroscopy, transmission electron microscopy, and energy-filtered transmission electron microscopy. Thicker oxide shells are obtained by oxidation in O2 ambient compared with NO ambient. Oxidation in O2 is observed to be self-limiting at temperatures below the viscoelastic temperature of SiO2 because of compressive stress normal to the SiO2/Si interface, which retards the surface oxidation rate. Oxidation in NO also results in self-limiting oxidation due to the incorporation of N at the Si/SiOx interface. This N-rich interfacial layer acts as an effective barrier against oxidant diffusion and also blocks the reaction sites on the Si surface. Therefore, NO oxidation is successful in slowing further oxidation of Si cores, even in a severe oxidizing ambient such as O2 at 1050 °C.

The surface chemistry of CH 2 I 2 on Ag(111) in the presence and absence of pre-adsorbed O, produced by NO 2 adsorption at elevated temperature, has been examined using temperature-programmed desorption and reflection absorption infrared spectroscopy. There is good evidence for the formation of adsorbed methylene, CH 2 (a), that reacts with another CH 2 (a) to form and desorb ethylene, C 2 H 4 (g), in a reaction-limited process. Increasing the surface coverage of CH 2 I 2 hinders both the dissociation and recombination processes indicated by the upward temperature shift in the formation of C 2 H 4. Co-adsorbed O atoms strengthen the bonding of CH 2 I 2 to the surface; the increased thermal stability is up to 60 K. The formation of C 2 H 4 decreases with increasing amounts of pre-adsorbed O; the main reaction product is CH 2 O produced in a reaction-limited process. CH 2 O forms either on the chemisorbed or on the oxide phase with desorption peak temperatures of 225 and 270 K, respectively. The formation of gas-phase carbon dioxide suggests that a formate intermediate is involved in a secondary reaction pathway.

We present enhanced 90 nm node CMOS devices on a partially depleted SO1 with 40 M I gate length, featuring advanced process modules for manufacture including RSD (Raised SourceDrain), disposable spacer, final spacer for SiD doping and silicide proximity, NiSi, and thermally optimized MOL (Middle-of-Line) process. For the first time, we systematically designed silicide proximity in SO1 and post-activation thermal cycles to improve series resistance and gate activation. This paper demonstrates decoupled effects of the individual performance boosters on drive currents and minimization of dopant deactivation, which resulted in dramatic improvement of drive currents by 11% to 19% (820 @/um and 420 W u m at Ioff = 40 nNum with Vdd = l.OV, for NFET and P E T , respectively), significant reduction in effective gate oxide thickness under gate inversion by -1.2 A and -2.1 A, for NFET and PFET, respectively, and an excellent inverter delay of less than 5.4 ps at Lgate of 40 nm.