Epitaxial films of GaAs and GaP have been deposited on GaAs, GaP, and Ge substrates by a vapor phase chemical reaction technique. The growth variables, such as source temperature, seed temperature, crystal orientation, surface preparation, and gas flow rate, have been investigated. The optimum conditions for the growth of epitaxial films and the electrical characteristics of these films are reported. GaAs-GaP junctions grown by a solution growth technique (TSM) are abrupt, whereas junctions grown by the vapor phase technique are graded. Detailed measurements of the I-V characteristics and capacitance of GaAs-Ge, GaAs-GaP, and GaP-Ge abrupt heterojunctions are interpreted in terms of Anderson's model. Kinks in the I-V characteristic are explained by discontinuities in the valence and conduction bands.

An investigation is made of the properties of the contact CdTe–InSb realized by deposition of InSb on the etched surface of n‐type CdTe single crystals and annealing. The profile of the elemental composition of the contact obtained by secondary ion mass spectrometry (SIMS) shows that certain interfacial chemical reactions do occur. The results obtained from the measurements of the photoresponse and forward characteristics versus temperature shows that near room temperature, the contact behaves like a „real”︁ Schottky barrier. At low temperature a tunneling transport mechanism appears.

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