A New 1200V-rating, trench gate NPT(Non Punch Though)-IGBT(Insu1ated Gate Bipolar Transistor) and -IEGT(Injection Enhancement Gate Transistor) have been developed. Some works for the IE(carrier [njection Enhancement) effect related to relatively high voltage devices were reported [1,2,3,4]. This time, the IE-effect was employed in 1200V-rating trench gate NPT-IGBT for the first time. The IE-effect was adopted mainly by making some p-bast: regions not contacted to the emitter electrode. By numerical simulation, it is found that the IE-effect is effective in reducing on-state voltage for 1200V-rating NPT-IGBT. On the basis of these investigations, a 15OA-rating IGBT chip was fabricated. The on-state voltage for this new device has resulted in as low as 1.8V at 85A/cmZ without sacrificing its ruggedness to withstand destruction and its margin for blocking voltage. Emitter r electrode r Source Itacted n-base 7 r collector \ I Fig. 1 New trench gate NPT-IGElT structure

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The 600V Non-Punch Through WPT) IGBT which has low on-state voltage (V,,(sat)) has been developed. This device has a fine pitch trench-gate structure at the emitter side and the collector layer with low injection efficiency at collector side. A novel profile has been installed to realize low injection efficiency and low VcE(sat).By numerical simulation, it has been confirmed that the trade-off relation between Vcc(sat) and turn-off loss of the trench-gate NPT-IGBT is as good as that of the trench-gate punch through (PT-)IGBT Adopting the novel profile for the collector structure, the low Vo(sat) of I 6 V at 180A cni' has been realized at the 600V trcnch-gate NPT-IGU 1-of 1.6V at 180A/cm', using the proposed novel collector structure.Simulation Results Figure 1 shows a cross-sectional view of the 600V trench-gate PT-and NPT-IGBTs. Trench-gate NPT-IGBT has a low injection efficiency emitter layer at collector side and high carrier lifetime.Emitter electrode \ emitt

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