Erratum: “Suppressed diffusion of boron and carbon in carbon-rich silicon” [Appl. Phys. Lett. <b>73</b>, 1682 (1998)]

Rücker, H.; Heinemann, B.; Röpke, Wilfried; Kurps, R.; Krüger, D.; Lippert, G.; Osten, H. J.

doi:10.1063/1.124301

Cited by 13 publications

(9 citation statements)

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“…At the surface region (0-25 nm depth), a slight broadening of the indium profile is observed compared to the as-implanted profile. This is likely due to the absence of carbon on the surface region and that previous work has shown that the diffusion suppression of carbon is localized phenomenon [6]. Between the increasing temperatures of 650-800 -C, the indium profile at the tail end remains stationary (between 90 and 200 nm depth); indicating that indium TED is suppressed.…”

Section: Resultsmentioning

confidence: 85%

Defect suppression of indium end-of-range during solid phase epitaxy annealing using Si1−yCy in silicon

Tan¹,

Chor²,

Lee³

et al. 2006

Thin Solid Films

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Section: Resultsmentioning

confidence: 85%

Defect suppression of indium end-of-range during solid phase epitaxy annealing using Si1−yCy in silicon

Tan¹,

Chor²,

Lee³

et al. 2006

Thin Solid Films

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“…This phenomenon is similar to the suppression of boron diffusion by C [10]. The presence of C along the NiSi grain boundaries may also hinder the diffusion of Al towards the NiSi/Si interface [ Fig.…”

Section: Samplementioning

confidence: 82%

Novel technique to engineer aluminum profile at nickel-silicide/Silicon:Carbon interface for contact resistance reduction, and integration in strained N-MOSFETs with silicon-carbon stressors

Koh

Zhou

Thanigaivelan³

et al. 2011

2011 International Electron Devices Meeting

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We report a new technique of achieving reduced nickel silicide contact resistance in strained n-FETs, where a pre-silicide Aluminum (Al) implant was introduced, and the Al profile was controlled/engineered by Carbon (C). C suppresses Al diffusion during silicidation, hence retaining high concentration of Al within the NiSi. Incorporating Al within NiSi reduces the Schottky barrier height for n-Si:C contact, leading to 18 % I On improvement for Si:C S/D nFETs with no compromise on short channel effects.

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“…After annealing, the SIMS profiles clearly show the reduction of B diffusion in the C region. It has to be noted that, after the initial publication by Rücker et al it turned out that the C concentration had been overestimated by a factor 2 (top C concentration of 5 × 10 19 cm −3 instead of 1 × 10 20 cm −3 ) [4]. Taking this into account, we have performed simulations of these experiments.…”

Section: Boronmentioning

confidence: 99%

New books on physics and related sciences

Zakharova¹

2000

Phys.-Usp.

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A complete model of C diffusion and its effect on dopant diffusion has been developed and fitted to experimental data acquired in our previous works, and in the published literature. The role of C clustering in the diffusion behaviour of C and dopant impurities in the presence of very high C concentrations has been modelled. Results on enhanced Sb diffusion in the presence of very high C concentration produced by MBE can be explained on the assumption that a small, but significant, percentage of the C is clustered following epitaxy. For C content below 1 × 10 20 cm −3 , and for higher concentrations provided the initial level of clustered C is known, our model provides an important predictive capability for the effect of C on dopant diffusion.

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Erratum: “Suppressed diffusion of boron and carbon in carbon-rich silicon” [Appl. Phys. Lett. 73, 1682 (1998)]

Cited by 13 publications

References 0 publications

Defect suppression of indium end-of-range during solid phase epitaxy annealing using Si1−yCy in silicon

Defect suppression of indium end-of-range during solid phase epitaxy annealing using Si1−yCy in silicon

Novel technique to engineer aluminum profile at nickel-silicide/Silicon:Carbon interface for contact resistance reduction, and integration in strained N-MOSFETs with silicon-carbon stressors

New books on physics and related sciences

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