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A method was developed to investigate the transient enhanced diffusion (TED) of implanted boron by observing the redistribution of buried boron isotopes in the implanted region. The buried layer was created by 10B+ implantation and the implant damage was induced by 11B+ implants at various doses. With low-dose ion implantation, implanted dopants exhibit similar TED behavior as embedded dopants. For implant doses higher than 5×1014 cm-2, the uphill diffusion of 10B near the immobile 11B peak indicates the presence of TED under boron interstitial clustering. The presence of TED remains in the projected range for the high-dose implantation at 25 keV even though dense dislocations exist. However, as the implant energy decreases to 15 keV, TED is prohibited from the surface to the project range.

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