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The impact of Si passivation (SP) on Ge metal-insulator-semiconductor interface properties and the inversion-layer mobility of Ge p-type metal-insulator-semiconductor field effect transistors (PMISFETs) were investigated by using the devices with different thicknesses of the SP layers. SP was effective in decreasing the total charged centers instead of the interface traps. As a result, the inversion-layer hole mobility of the Ge MISFET was significantly improved by introducing the SP layers of the appropriate thickness. This improvement is attributable to the reduction of the amount of the interface charges and the separation of the positions of mobile carriers and the interface charges by the SP layers.

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We propose a new structure of power MOSFET, i.e. Super Trench power MOSFET (STM). Instead of a conventional ndrift layer, STM hasvertical P and N layers formed within mesa regions between adjacent trenches filled with insulator. The P and N stripe structure relaxes the electric field[l-3) in off-state and makes possible a lower specific on-resistance (Ron, sp) than that of the conventional MOSFET. We fabricated a 250V STM for the first time with only one additional mask over the conventional DMOS process, and the measured data show high breakdown voltage with highly doped n drift layer. The device simulation results show it should be possible to lower the Ron,sp to 5mQcm' for a breakdown voltage of 300 V. (?Source I O D r a in

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