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Low noise AlGaAs/GaAs HEMT with 0.1 pm gate length have been successfully developed.A state-of-the-art low noise figure of 0.51 dB and 1.9 dB are obtained at 18 GHz and 40 GHz at room temperature, with an associated gain of lO.8dB and 5.3dB.respectively.The performance has been achieved by shortening the gate length to 0.1 p m and also by lowering the gate resistance drastically with a T shaped gate structure.

In0.5Al0.5P/GaAs modulation-doped field-effect transistors (MODFETs) have been fabricated to study the applicability of In0.5(Ga1-x Al x )0.5P/GaAs heterostructures to electronic devices. A DC transconductance of 250 mS/mm and a noise figure of 1.7 dB with associated gain of 10 dB at 12 GHz were obtained for a MODFET with a 0.25 µm-long and 200 µm-wide gate. Improvements in the performance are expected by Al-composition optimization for the InGaAlP. These results show the promising potential of In0.5(Ga1-x Al x )0.5P/GaAs MODFETs as high-frequency and high-speed devices.

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